@inbook{48788ff2cadd4a59a43a5e97d242fe6b,
title = "Atomic layer deposition of HfO2 on III-V semiconductors - An interfacial chemistry perspective",
abstract = "The atomic layer deposition (ALD) of HfO2 on various III-V semiconductor materials is discussed in detail, with particular emphasis on the interaction between the HfO2 and the residual native oxide present at the interface. This interface is of critical importance in terms of device performance, impacting on the interfacial trap density which can lead to Fermi level pinning. Changes in the interfacial chemistry between ALD HfO2 and GaAs, InGaAs and InP are discussed in terms of changes to the composition of the native oxide upon interaction with the ALD precursors, as well as the potential for migration of substrate materials into the high-k oxide layer.",
keywords = "ALD, Hfo, III-V semiconductor, InGaAs, InP",
author = "Wilfredo Cabrera and Hong Dong and Barry Brennan and {\'E}amon O'Connor and Patrick Carolan and Rohit Galatage and Scott Monaghan and Ian Povey and Hurley, \{Paul K.\} and Hinkle, \{Christopher L.\} and Yves Chabal and Wallace, \{Robert M.\}",
year = "2013",
language = "English",
isbn = "9781482205848",
series = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",
pages = "1--4",
booktitle = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",
note = "Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 ; Conference date: 12-05-2013 Through 16-05-2013",
}