Atomic vapor deposition of bismuth titanate thin films

Nitin Deepak; Panfeng Zhang; Lynette Keeney; Martyn E. Pemble; Roger W. Whatmore

doi:10.1109/ISAF.2012.6297829

Atomic vapor deposition of bismuth titanate thin films

Nitin Deepak
, Panfeng Zhang
, Lynette Keeney
, Martyn E. Pemble
, Roger W. Whatmore

University College Cork

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

C-axis oriented ferroelectric bismuth titanate (Bi ₄Ti ₃O ₁₂) thin films were grown on (001) strontium titanate (SrTiO ₃) substrates by atomic vapour deposition technique. Ferroelectric properties of thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data (XRD) and transmission electron microscopy (TEM) analysis showed presence of out-of-phase boundaries (OPBs). These OPBs originate at atomic steps on the SrTiO ₃ substrate surface. It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films.

Original language	English
Title of host publication	Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012
DOIs	https://doi.org/10.1109/ISAF.2012.6297829
Publication status	Published - 2012
Event	2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM - Aveiro, Portugal Duration: 9 Jul 2012 → 13 Jul 2012

Publication series

Name	Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012

Conference

Conference	2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM
Country/Territory	Portugal
City	Aveiro
Period	9/07/12 → 13/07/12

Keywords

Ferroelectrics

Access to Document

10.1109/ISAF.2012.6297829

Cite this

Deepak, N., Zhang, P., Keeney, L., Pemble, M. E., & Whatmore, R. W. (2012). Atomic vapor deposition of bismuth titanate thin films. In Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012 Article 6297829 (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012). https://doi.org/10.1109/ISAF.2012.6297829

Deepak, Nitin ; Zhang, Panfeng ; Keeney, Lynette et al. / Atomic vapor deposition of bismuth titanate thin films. Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012. 2012. (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012).

@inproceedings{953fa935cfe04496833eda905a7c6bee,

title = "Atomic vapor deposition of bismuth titanate thin films",

abstract = "C-axis oriented ferroelectric bismuth titanate (Bi 4Ti 3O 12) thin films were grown on (001) strontium titanate (SrTiO 3) substrates by atomic vapour deposition technique. Ferroelectric properties of thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data (XRD) and transmission electron microscopy (TEM) analysis showed presence of out-of-phase boundaries (OPBs). These OPBs originate at atomic steps on the SrTiO 3 substrate surface. It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films.",

keywords = "Ferroelectrics",

author = "Nitin Deepak and Panfeng Zhang and Lynette Keeney and Pemble, \{Martyn E.\} and Whatmore, \{Roger W.\}",

year = "2012",

doi = "10.1109/ISAF.2012.6297829",

language = "English",

isbn = "9781467326681",

series = "Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012",

booktitle = "Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012",

note = "2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM ; Conference date: 09-07-2012 Through 13-07-2012",

}

Deepak, N, Zhang, P, Keeney, L, Pemble, ME & Whatmore, RW 2012, Atomic vapor deposition of bismuth titanate thin films. in Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012., 6297829, Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012, 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM, Aveiro, Portugal, 9/07/12. https://doi.org/10.1109/ISAF.2012.6297829

Atomic vapor deposition of bismuth titanate thin films. / Deepak, Nitin; Zhang, Panfeng; Keeney, Lynette et al.
Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012. 2012. 6297829 (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Atomic vapor deposition of bismuth titanate thin films

AU - Deepak, Nitin

AU - Zhang, Panfeng

AU - Keeney, Lynette

AU - Pemble, Martyn E.

AU - Whatmore, Roger W.

PY - 2012

Y1 - 2012

N2 - C-axis oriented ferroelectric bismuth titanate (Bi 4Ti 3O 12) thin films were grown on (001) strontium titanate (SrTiO 3) substrates by atomic vapour deposition technique. Ferroelectric properties of thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data (XRD) and transmission electron microscopy (TEM) analysis showed presence of out-of-phase boundaries (OPBs). These OPBs originate at atomic steps on the SrTiO 3 substrate surface. It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films.

AB - C-axis oriented ferroelectric bismuth titanate (Bi 4Ti 3O 12) thin films were grown on (001) strontium titanate (SrTiO 3) substrates by atomic vapour deposition technique. Ferroelectric properties of thin films are greatly affected by the presence of various kinds of defects. Detailed x-ray diffraction data (XRD) and transmission electron microscopy (TEM) analysis showed presence of out-of-phase boundaries (OPBs). These OPBs originate at atomic steps on the SrTiO 3 substrate surface. It is found that the OPB density changes appreciably with the amount of titanium injected during growth of the thin films.

KW - Ferroelectrics

UR - https://www.scopus.com/pages/publications/84867913363

U2 - 10.1109/ISAF.2012.6297829

DO - 10.1109/ISAF.2012.6297829

M3 - Conference proceeding

AN - SCOPUS:84867913363

SN - 9781467326681

T3 - Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012

BT - Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012

T2 - 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics Held with 11th IEEE European Conf. on Applications of Polar Dielectrics and 4th IEEE Int. Symp on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/ECAPD/PFM

Y2 - 9 July 2012 through 13 July 2012

ER -

Deepak N, Zhang P, Keeney L, Pemble ME, Whatmore RW. Atomic vapor deposition of bismuth titanate thin films. In Proc. of 2012 21st IEEE International Symposium on Applications of Ferroelectrics Held Jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE, ISAF/ECAPD/PFM 2012. 2012. 6297829. (Proceedings of 2012 21st IEEE Int. Symp. on Applications of Ferroelectrics held jointly with 11th IEEE European Conference on the Applications of Polar Dielectrics and IEEE PFM, ISAF/ECAPD/PFM 2012). doi: 10.1109/ISAF.2012.6297829

Atomic vapor deposition of bismuth titanate thin films

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