Atomistic analysis of localisation and band mixing effects in Ge1-x(C,Sn)x group-IV alloys

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

We present a theoretical analysis of the electronic structure of the group-IV alloys Ge1-x(C,Sn)x. Our analysis is based on a semi-empirical tight-binding model, parametrised via hybrid density functional theory calculations. Using atomistic alloy supercell calculations we identify and quantify the respective roles played by C-related localised impurity states and Sn-induced band mixing in determining the nature of the indirect- to direct-gap transition in Ge1-xCx and Ge1-x Snx. For exemplar calculations on 64-atom Ge63(CSn)1(x=1.56%) supercells we derive and parametrise model Hamiltonians which provide quantitative and physically transparent descriptions of these localisation and band mixing mechanisms, and comment on the implications of the Ge1-x(C2Sn)x alloy band structure for technologically relevant material properties.

Original languageEnglish
Title of host publication18th International Conference on Nanotechnology, NANO 2018
PublisherIEEE Computer Society
ISBN (Electronic)9781538653364
DOIs
Publication statusPublished - 2 Jul 2018
Event18th International Conference on Nanotechnology, NANO 2018 - Cork, Ireland
Duration: 23 Jul 201826 Jul 2018

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
Volume2018-July
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference18th International Conference on Nanotechnology, NANO 2018
Country/TerritoryIreland
CityCork
Period23/07/1826/07/18

Fingerprint

Dive into the research topics of 'Atomistic analysis of localisation and band mixing effects in Ge1-x(C,Sn)x group-IV alloys'. Together they form a unique fingerprint.

Cite this