@inproceedings{a6e14127ef1a438282eb9a27e4c30aa7,
title = "Atomistic analysis of transport properties of InGaN/GaN multi-quantum well",
abstract = "We present an atomistic analysis of transport properties of an InGaN/GaN multi-quantum well system. Our study is carried out in the combined frame of tight-binding and Non-Equilibrium Green's Function theories. In our fully three-dimensional treatment, special attention is paid to the impact of random alloy fluctuations on the electron transmission probability. The calculations reveal that the alloy microstructure significantly impacts the transmission at least for the energetically lowest bound states in the quantum wells.",
keywords = "atomistic description, InGaN, quantum wells, transport properties",
author = "Michael O'Donovan and Mathieu Luisier and O'Reilly, \{Eoin P.\} and Stefan Schulz",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019 ; Conference date: 08-07-2019 Through 12-07-2019",
year = "2019",
month = jul,
doi = "10.1109/NUSOD.2019.8806898",
language = "English",
series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",
publisher = "IEEE Computer Society",
pages = "17--18",
editor = "Karin Hinzer and Joachim Piprek",
booktitle = "19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019",
address = "United States",
}