@inbook{9205ab7e33bc42debe31b1dd3b75c1ab,
title = "Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices",
abstract = "Source/drain formation in ultra-thin body devices by conventional ion implantation is analyzed using atomistic simulation. Dopant retention is dramatically reduced by backscattering for low-energy and low-tilt angles, and by transmission for high angles. For the first time, Molecular Dynamics and Kinetic Monte Carlo simulations, encompassing the entire Si body, are applied in order to predict damage during implant and subsequent recovery during anneal. These show that amorphization should be avoided as recrystallization in ultra-thin-body Si leads to twin boundary defects and poly-crystalline Si formation, despite the presence of a mono-crystalline Si seed. Rapid dissolution of end-of range defects in thin-body Si, caused by surface proximity, does not significantly reduce diffusion lengths. The conclusions of the atomistic modeling are verified by a novel characterization methodology and electrical analysis.",
author = "L. Pelaz and R. Duffy and M. Aboy and L. Marques and P. Lopez and I. Santos and Pawlak, \{B. J.\} and \{Van Dal\}, \{M. J.H.\} and B. Duriez and T. Merelle and G. Doornbos and N. Collaert and L. Witters and R. Rooyackers and W. Vandervorst and M. Jurczak and M. Kaiser and Weemaes, \{R. G.R.\} and \{Van Berkum\}, \{J. G.M.\} and P. Breimer and Lander, \{R. J.P.\}",
year = "2008",
doi = "10.1109/IEDM.2008.4796744",
language = "English",
isbn = "9781424423781",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",
note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",
}