Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
- L. Pelaz
- , R. Duffy
- , M. Aboy
- , L. Marques
- , P. Lopez
- , I. Santos
- , B. J. Pawlak
- , M. J.H. Van Dal
- , B. Duriez
- , T. Merelle
- , G. Doornbos
- , N. Collaert
- , L. Witters
- , R. Rooyackers
- , W. Vandervorst
- , M. Jurczak
- , M. Kaiser
- , R. G.R. Weemaes
- , J. G.M. Van Berkum
- , P. Breimer
- University of Valladolid
- NXP-TSMC Research Center
- Interuniversitair Micro-Elektronica Centrum
- Koninklijke Philips N.V.
Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review