Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices

L. Pelaz; L. Marques; M. Aboy; P. Lopez; I. Santos; R. Duffy

doi:10.1109/IEDM.2009.5424309

Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices

L. Pelaz
, L. Marques
, M. Aboy
, P. Lopez
, I. Santos
, R. Duffy

University of Valladolid

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters for doping of FinFETs are presented, considering lateral diffusion and activation.

Original language	English
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages	21.4.1-21.4.4
DOIs	https://doi.org/10.1109/IEDM.2009.5424309
Publication status	Published - 2009
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: 7 Dec 2009 → 9 Dec 2009

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	7/12/09 → 9/12/09

Access to Document

10.1109/IEDM.2009.5424309

Cite this

Pelaz, L., Marques, L., Aboy, M., Lopez, P., Santos, I., & Duffy, R. (2009). Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 21.4.1-21.4.4). Article 5424309 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424309

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title = "Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices",

abstract = "Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters for doping of FinFETs are presented, considering lateral diffusion and activation.",

author = "L. Pelaz and L. Marques and M. Aboy and P. Lopez and I. Santos and R. Duffy",

year = "2009",

doi = "10.1109/IEDM.2009.5424309",

language = "English",

isbn = "9781424456406",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "21.4.1--21.4.4",

booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",

note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",

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Pelaz, L, Marques, L, Aboy, M, Lopez, P, Santos, I & Duffy, R 2009, Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424309, Technical Digest - International Electron Devices Meeting, IEDM, pp. 21.4.1-21.4.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 7/12/09. https://doi.org/10.1109/IEDM.2009.5424309

Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices. / Pelaz, L.; Marques, L.; Aboy, M. et al.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 21.4.1-21.4.4 5424309 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices

AU - Pelaz, L.

AU - Marques, L.

AU - Aboy, M.

AU - Lopez, P.

AU - Santos, I.

AU - Duffy, R.

PY - 2009

Y1 - 2009

N2 - Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters for doping of FinFETs are presented, considering lateral diffusion and activation.

AB - Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters for doping of FinFETs are presented, considering lateral diffusion and activation.

UR - https://www.scopus.com/pages/publications/77952336592

U2 - 10.1109/IEDM.2009.5424309

DO - 10.1109/IEDM.2009.5424309

M3 - Chapter

AN - SCOPUS:77952336592

SN - 9781424456406

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 21.4.1-21.4.4

BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest

T2 - 2009 International Electron Devices Meeting, IEDM 2009

Y2 - 7 December 2009 through 9 December 2009

ER -

Pelaz L, Marques L, Aboy M, Lopez P, Santos I, Duffy R. Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 21.4.1-21.4.4. 5424309. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424309

Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices

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