Atomistic study of Urbach tail energies in (Al,Ga)N quantum well systems

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Abstract

Aluminium gallium nitride is a system of interest for developing ultraviolet (UV) optoelectronic devices. Here Urbach tails induced by carrier localization effects play a key role in determining device behaviour. We study the electronic structure of AlxGa1-xN/AlyGa1-yN single quantum wells using an atomistic framework. Results show that the density of states exhibits a tail at low energies due to disorder in the alloy microstructure. Our analysis allows for insight into the orbital character of the states forming the Urbach tails, which can affect light polarization characteristics, and important quantity for deep UV light emitters.

Original languageEnglish
Title of host publication23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023
EditorsPaolo Bardella, Alberto Tibaldi
PublisherIEEE Computer Society
Pages79-80
Number of pages2
ISBN (Electronic)9798350314298
DOIs
Publication statusPublished - 2023
Event23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023 - Turin, Italy
Duration: 18 Sep 202321 Sep 2023

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume2023-September
ISSN (Print)2158-3234

Conference

Conference23rd International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2023
Country/TerritoryItaly
CityTurin
Period18/09/2321/09/23

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