TY - GEN
T1 - Attomolar streptavidin and pH, low power sensor based on 3D vertically stacked SiNW FETs
AU - Buitrago, Elizabeth
AU - Fernandez-Bolanos, Montserrat
AU - Georgiev, Yordan M.
AU - Ran, Yu
AU - Lotty, Olan
AU - Holmes, Justin D.
AU - Nightingale, Adrian M.
AU - Ionescu, Adrian M.
PY - 2014
Y1 - 2014
N2 - 3D vertically stacked silicon nanowire (SiNW) field effect transistors (FET) with high density arrays (up to 7×20) of fully depleted and ultra-thin (15-30 nm) suspended channels were fabricated by a top-down CMOS compatible process on silicon on insulator (SOI). The channels can be wrapped by conformal high-κ gate dielectrics (HfO2) and their conductivity can be excellently controlled either by a reference electrode or by three local gates; a backgate (BG) and two symmetrical Pt side-gates (SG) offering unique sensitivity tuning. Such 3D structure has been (3-Aminopropyl)-triethoxysilane (APTES) functionalized and biotynilated for pH and streptavidin (protein) sensing, respectively. An ultra-low concentration of 17 aM of streptavidin was measured, the lowest ever reported in literature. Extremely high quasi-exponential drain current responses (ΔI d/pH) of ∼0.70 dec/pH were measured for structures with APTES functionalized SiO2 gate dielectrics when operated in the subthreshold regime. Also, high drain current responses > 20 μA/pH and high sensitivities (S ∼ 95%) were measured for structures with a native oxide gate dielectrics when operated in the strong-inversion regime.
AB - 3D vertically stacked silicon nanowire (SiNW) field effect transistors (FET) with high density arrays (up to 7×20) of fully depleted and ultra-thin (15-30 nm) suspended channels were fabricated by a top-down CMOS compatible process on silicon on insulator (SOI). The channels can be wrapped by conformal high-κ gate dielectrics (HfO2) and their conductivity can be excellently controlled either by a reference electrode or by three local gates; a backgate (BG) and two symmetrical Pt side-gates (SG) offering unique sensitivity tuning. Such 3D structure has been (3-Aminopropyl)-triethoxysilane (APTES) functionalized and biotynilated for pH and streptavidin (protein) sensing, respectively. An ultra-low concentration of 17 aM of streptavidin was measured, the lowest ever reported in literature. Extremely high quasi-exponential drain current responses (ΔI d/pH) of ∼0.70 dec/pH were measured for structures with APTES functionalized SiO2 gate dielectrics when operated in the subthreshold regime. Also, high drain current responses > 20 μA/pH and high sensitivities (S ∼ 95%) were measured for structures with a native oxide gate dielectrics when operated in the strong-inversion regime.
UR - https://www.scopus.com/pages/publications/84904152811
U2 - 10.1109/VLSI-TSA.2014.6839691
DO - 10.1109/VLSI-TSA.2014.6839691
M3 - Conference proceeding
AN - SCOPUS:84904152811
SN - 9781479922178
T3 - Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
BT - Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
PB - IEEE Computer Society
T2 - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Y2 - 28 April 2014 through 30 April 2014
ER -