| Original language | Undefined/Unknown |
|---|---|
| Journal | IEEE Electron Device Letters |
| Publication status | Published - 2009 |
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$$\backslash$hbox ${$TiN/ZrO$}$ _ ${$2$}$ $/Ti/Al Metal--Insulator--Metal Capacitors With Subnanometer CET Using ALD-Deposited $$\backslash$hbox ${$ZrO$}$ _ ${$2$}$ $ for DRAM Applications
Research output: Contribution to journal › Article › peer-review