BAlGaN light-emitting diode emitting at 350 nm

In this work, the authors report the first demonstration of an ultraviolet light-emitting diode (LED) with boron-containing quantum wells (QWs). Secondary ion mass spectrometry measurements revealed a B concentration of 1% in the first QW with an increase in subsequent QWs and lingering decay into the p-region, likely attributable to boron's surfactant nature. Electroluminescence emission from the BAlGaN LED was observed at 350 nm, with higher intensity compared to the AlGaN reference LED at low currents. A higher operating voltage compared to the reference LED was also observed which may be attributable to a nanomasking behaviour of boron in (Al)GaN alloys.