Band alignment tailoring of InAs1- xSbx/GaAs quantum dots: Control of type i to type II transition

J. He; C. J. Reyner; B. L. Liang; K. Nunna; D. L. Huffaker; N. Pavarelli; K. Gradkowski; T. J. Ochalski; G. Huyet; V. G. Dorogan; Yu I. Mazur; G. J. Salamo

doi:10.1021/nl102237n

Band alignment tailoring of InAs_{1- x}Sb_x/GaAs quantum dots: Control of type i to type II transition

J. He
, C. J. Reyner
, B. L. Liang
, K. Nunna
, D. L. Huffaker
, N. Pavarelli
, K. Gradkowski
, T. J. Ochalski
, G. Huyet
, V. G. Dorogan
, Yu I. Mazur
, G. J. Salamo

Research output: Contribution to journal › Article › peer-review

Abstract

We report the growth of InAs_1-xSb_x self-assembled quantum dots (QDs) on GaAs (100) by molecular beam epitaxy. The optical properties of the QDs are investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL). A type I to type II band alignment transition is demonstrated by both power-dependent PL and TRPL in InAs _1-xSb_x QD samples with increased Sb beam flux. Results are compared to an eight-band strain-dependent kÂ•p model incorporating detailed QD structure and alloy composition. The calculations show that the conduction band offset of InAs_1-xSb_x/GaAs can be continuously tuned from 0 to 500 meV and a flat conduction band alignment exists when 60% Sb is incorporated into the QDs. Our study offers the possibility of tailoring the band structure of GaAs based InAsSb QDs and opens up new means for device applications.

Original language	English
Pages (from-to)	3052-3056
Number of pages	5
Journal	Nano Letters
Volume	10
Issue number	8
DOIs	https://doi.org/10.1021/nl102237n
Publication status	Published - 11 Aug 2010

Keywords

band alignment
optical properties
Quantum dot

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10.1021/nl102237n

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@article{0390eaf5c87a41b7afcc67bf3ab2a308,

title = "Band alignment tailoring of InAs1- xSbx/GaAs quantum dots: Control of type i to type II transition",

abstract = "We report the growth of InAs1-xSbx self-assembled quantum dots (QDs) on GaAs (100) by molecular beam epitaxy. The optical properties of the QDs are investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL). A type I to type II band alignment transition is demonstrated by both power-dependent PL and TRPL in InAs 1-xSbx QD samples with increased Sb beam flux. Results are compared to an eight-band strain-dependent k{\^A}•p model incorporating detailed QD structure and alloy composition. The calculations show that the conduction band offset of InAs1-xSbx/GaAs can be continuously tuned from 0 to 500 meV and a flat conduction band alignment exists when 60\% Sb is incorporated into the QDs. Our study offers the possibility of tailoring the band structure of GaAs based InAsSb QDs and opens up new means for device applications.",

keywords = "band alignment, optical properties, Quantum dot",

author = "J. He and Reyner, \{C. J.\} and Liang, \{B. L.\} and K. Nunna and Huffaker, \{D. L.\} and N. Pavarelli and K. Gradkowski and Ochalski, \{T. J.\} and G. Huyet and Dorogan, \{V. G.\} and Mazur, \{Yu I.\} and Salamo, \{G. J.\}",

year = "2010",

month = aug,

day = "11",

doi = "10.1021/nl102237n",

language = "English",

volume = "10",

pages = "3052--3056",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Band alignment tailoring of InAs1- xSbx/GaAs quantum dots

T2 - Control of type i to type II transition

AU - He, J.

AU - Reyner, C. J.

AU - Liang, B. L.

AU - Nunna, K.

AU - Huffaker, D. L.

AU - Pavarelli, N.

AU - Gradkowski, K.

AU - Ochalski, T. J.

AU - Huyet, G.

AU - Dorogan, V. G.

AU - Mazur, Yu I.

AU - Salamo, G. J.

PY - 2010/8/11

Y1 - 2010/8/11

N2 - We report the growth of InAs1-xSbx self-assembled quantum dots (QDs) on GaAs (100) by molecular beam epitaxy. The optical properties of the QDs are investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL). A type I to type II band alignment transition is demonstrated by both power-dependent PL and TRPL in InAs 1-xSbx QD samples with increased Sb beam flux. Results are compared to an eight-band strain-dependent kÂ•p model incorporating detailed QD structure and alloy composition. The calculations show that the conduction band offset of InAs1-xSbx/GaAs can be continuously tuned from 0 to 500 meV and a flat conduction band alignment exists when 60% Sb is incorporated into the QDs. Our study offers the possibility of tailoring the band structure of GaAs based InAsSb QDs and opens up new means for device applications.

AB - We report the growth of InAs1-xSbx self-assembled quantum dots (QDs) on GaAs (100) by molecular beam epitaxy. The optical properties of the QDs are investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL). A type I to type II band alignment transition is demonstrated by both power-dependent PL and TRPL in InAs 1-xSbx QD samples with increased Sb beam flux. Results are compared to an eight-band strain-dependent kÂ•p model incorporating detailed QD structure and alloy composition. The calculations show that the conduction band offset of InAs1-xSbx/GaAs can be continuously tuned from 0 to 500 meV and a flat conduction band alignment exists when 60% Sb is incorporated into the QDs. Our study offers the possibility of tailoring the band structure of GaAs based InAsSb QDs and opens up new means for device applications.

KW - band alignment

KW - optical properties

KW - Quantum dot

UR - https://www.scopus.com/pages/publications/77955576791

U2 - 10.1021/nl102237n

DO - 10.1021/nl102237n

M3 - Article

AN - SCOPUS:77955576791

SN - 1530-6984

VL - 10

SP - 3052

EP - 3056

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -

Band alignment tailoring of InAs_{1- x}Sb_x/GaAs quantum dots: Control of type i to type II transition

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Keywords

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