Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers

M. G. Peters; B. J. Thibeault; D. B. Young; J. W. Scott; F. H. Peters; A. C. Gossard; L. A. Coldren

doi:10.1063/1.110156

Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers

M. G. Peters
, B. J. Thibeault
, D. B. Young
, J. W. Scott
, F. H. Peters
, A. C. Gossard
, L. A. Coldren

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

Abstract

We report on a technique of grading the heterobarrier interfaces of a p-type distributed Bragg reflector mirror to reduce the operating voltages of vertical-cavity surface-emitting lasers (VCSELs). We report VCSELs with lower operating voltages (2-3 V) and record continuous-wave room-temperature power-conversion efficiencies (17.3%). We experimentally demonstrate that by using a parabolic grading and modulating the doping correctly, a flat valence band is generated that provides low voltage hole transport. The low resistance mirrors are achieved using low Be doping, digital-alloy grading and 600°C growth temperatures.

Original language	English
Pages (from-to)	3411-3413
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	25
DOIs	https://doi.org/10.1063/1.110156
Publication status	Published - 1993
Externally published	Yes

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10.1063/1.110156

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title = "Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers",

abstract = "We report on a technique of grading the heterobarrier interfaces of a p-type distributed Bragg reflector mirror to reduce the operating voltages of vertical-cavity surface-emitting lasers (VCSELs). We report VCSELs with lower operating voltages (2-3 V) and record continuous-wave room-temperature power-conversion efficiencies (17.3\%). We experimentally demonstrate that by using a parabolic grading and modulating the doping correctly, a flat valence band is generated that provides low voltage hole transport. The low resistance mirrors are achieved using low Be doping, digital-alloy grading and 600°C growth temperatures.",

author = "Peters, \{M. G.\} and Thibeault, \{B. J.\} and Young, \{D. B.\} and Scott, \{J. W.\} and Peters, \{F. H.\} and Gossard, \{A. C.\} and Coldren, \{L. A.\}",

year = "1993",

doi = "10.1063/1.110156",

language = "English",

volume = "63",

pages = "3411--3413",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers

AU - Peters, M. G.

AU - Thibeault, B. J.

AU - Young, D. B.

AU - Scott, J. W.

AU - Peters, F. H.

AU - Gossard, A. C.

AU - Coldren, L. A.

PY - 1993

Y1 - 1993

N2 - We report on a technique of grading the heterobarrier interfaces of a p-type distributed Bragg reflector mirror to reduce the operating voltages of vertical-cavity surface-emitting lasers (VCSELs). We report VCSELs with lower operating voltages (2-3 V) and record continuous-wave room-temperature power-conversion efficiencies (17.3%). We experimentally demonstrate that by using a parabolic grading and modulating the doping correctly, a flat valence band is generated that provides low voltage hole transport. The low resistance mirrors are achieved using low Be doping, digital-alloy grading and 600°C growth temperatures.

AB - We report on a technique of grading the heterobarrier interfaces of a p-type distributed Bragg reflector mirror to reduce the operating voltages of vertical-cavity surface-emitting lasers (VCSELs). We report VCSELs with lower operating voltages (2-3 V) and record continuous-wave room-temperature power-conversion efficiencies (17.3%). We experimentally demonstrate that by using a parabolic grading and modulating the doping correctly, a flat valence band is generated that provides low voltage hole transport. The low resistance mirrors are achieved using low Be doping, digital-alloy grading and 600°C growth temperatures.

UR - https://www.scopus.com/pages/publications/0000529380

U2 - 10.1063/1.110156

DO - 10.1063/1.110156

M3 - Article

AN - SCOPUS:0000529380

SN - 0003-6951

VL - 63

SP - 3411

EP - 3413

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Band-gap engineered digital alloy interfaces for lower resistance vertical-cavity surface-emitting lasers

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