Band offsets at interfaces of (1 0 0)InxGa1-xAs (0 ≤ x ≤ 0.53) with Al2O3 and HfO2

V. V. Afanas'ev; A. Stesmans; G. Brammertz; A. Delabie; S. Sionke; A. O'Mahony; I. M. Povey; M. E. Pemble; E. O'Connor; P. K. Hurley; S. B. Newcomb

doi:10.1016/j.mee.2009.03.003

Band offsets at interfaces of (1 0 0)In_xGa_1-xAs (0 ≤ x ≤ 0.53) with Al₂O₃ and HfO₂

V. V. Afanas'ev
, A. Stesmans
, G. Brammertz
, A. Delabie
, S. Sionke
, A. O'Mahony
, I. M. Povey
, M. E. Pemble
, E. O'Connor
, P. K. Hurley
, S. B. Newcomb

Research output: Contribution to journal › Article › peer-review

Abstract

The electron energy band alignment at interfaces of In_xGa_1-xAs (0 ≤ x ≤ 0.53) with atomic-layer deposited insulators Al₂O₃ and HfO₂ is characterized using combined measurements of internal photoemission of electrons and photoconductivity. The measured energy of the In_xGa_1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the observed bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. Electron states originating from the interfacial oxidation of In_xGa_1-xAs lead to reduction of the electron barrier at the semiconductor/oxide interface.

Original language	English
Pages (from-to)	1550-1553
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	7-9
DOIs	https://doi.org/10.1016/j.mee.2009.03.003
Publication status	Published - Jul 2009

Keywords

Interface barrier
Internal photoemission
Semiconductor-insulator interface

Access to Document

10.1016/j.mee.2009.03.003

Cite this

@article{12298e445d6b4446826e2e29982293e9,

title = "Band offsets at interfaces of (1 0 0)InxGa1-xAs (0 ≤ x ≤ 0.53) with Al2O3 and HfO2",

abstract = "The electron energy band alignment at interfaces of InxGa1-xAs (0 ≤ x ≤ 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using combined measurements of internal photoemission of electrons and photoconductivity. The measured energy of the InxGa1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the observed bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. Electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction of the electron barrier at the semiconductor/oxide interface.",

keywords = "Interface barrier, Internal photoemission, Semiconductor-insulator interface",

author = "Afanas'ev, \{V. V.\} and A. Stesmans and G. Brammertz and A. Delabie and S. Sionke and A. O'Mahony and Povey, \{I. M.\} and Pemble, \{M. E.\} and E. O'Connor and Hurley, \{P. K.\} and Newcomb, \{S. B.\}",

year = "2009",

month = jul,

doi = "10.1016/j.mee.2009.03.003",

language = "English",

volume = "86",

pages = "1550--1553",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "7-9",

}

TY - JOUR

T1 - Band offsets at interfaces of (1 0 0)InxGa1-xAs (0 ≤ x ≤ 0.53) with Al2O3 and HfO2

AU - Afanas'ev, V. V.

AU - Stesmans, A.

AU - Brammertz, G.

AU - Delabie, A.

AU - Sionke, S.

AU - O'Mahony, A.

AU - Povey, I. M.

AU - Pemble, M. E.

AU - O'Connor, E.

AU - Hurley, P. K.

AU - Newcomb, S. B.

PY - 2009/7

Y1 - 2009/7

N2 - The electron energy band alignment at interfaces of InxGa1-xAs (0 ≤ x ≤ 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using combined measurements of internal photoemission of electrons and photoconductivity. The measured energy of the InxGa1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the observed bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. Electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction of the electron barrier at the semiconductor/oxide interface.

AB - The electron energy band alignment at interfaces of InxGa1-xAs (0 ≤ x ≤ 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using combined measurements of internal photoemission of electrons and photoconductivity. The measured energy of the InxGa1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the observed bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. Electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction of the electron barrier at the semiconductor/oxide interface.

KW - Interface barrier

KW - Internal photoemission

KW - Semiconductor-insulator interface

UR - https://www.scopus.com/pages/publications/67349198455

U2 - 10.1016/j.mee.2009.03.003

DO - 10.1016/j.mee.2009.03.003

M3 - Article

AN - SCOPUS:67349198455

SN - 0167-9317

VL - 86

SP - 1550

EP - 1553

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 7-9

ER -

Band offsets at interfaces of (1 0 0)In_xGa_1-xAs (0 ≤ x ≤ 0.53) with Al₂O₃ and HfO₂

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this