Band offsets at interfaces of (1 0 0)InxGa1-xAs (0 ≤ x ≤ 0.53) with Al2O3 and HfO2
- V. V. Afanas'ev
- , A. Stesmans
- , G. Brammertz
- , A. Delabie
- , S. Sionke
- , A. O'Mahony
- , I. M. Povey
- , M. E. Pemble
- , E. O'Connor
- , P. K. Hurley
- , S. B. Newcomb
- KU Leuven
- Interuniversitair Micro-Elektronica Centrum
- Glebe Scientific Ltd.
Research output: Contribution to journal › Article › peer-review