Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells

Reza Arkani; Christopher A. Broderick; Eoin P. O'Reilly

doi:10.1109/NUSOD.2019.8807051

Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells

Reza Arkani
, Christopher A. Broderick
, Eoin P. O'Reilly

School of Physics

University College Cork

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Type-II quantum-confined heterostructures constitute a promising approach to realise highly efficient intermediate band solar cells (IBSCs), due to their long radiative lifetimes and the flexibility with which their electronic and optical properties can be engineered. To quantify the potential of type-II GaSb/GaAs quantum rings (QRs) for IBSC applications we undertake a theoretical investigation of their electronic properties. In these heterostructures the intermediate band is formed by bound hole states which are strongly localised within the QR. We demonstrate that the unconventional QR geometry provides a flexible platform to engineer the valence band structure, enabling optimum energy gaps - which maximise overall IBSC efficiency - to be obtained via structural optimisation. Our results emphasise that utilising QRs for IBSC applications requires careful control of QR morphology in epitaxial growth.

Original language	English
Title of host publication	19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019
Editors	Karin Hinzer, Joachim Piprek
Publisher	IEEE Computer Society
Pages	53-54
Number of pages	2
ISBN (Electronic)	9781728116471
DOIs	https://doi.org/10.1109/NUSOD.2019.8807051
Publication status	Published - Jul 2019
Event	19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019 - Ottawa, Canada Duration: 8 Jul 2019 → 12 Jul 2019

Publication series

Name	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume	2019-July
ISSN (Print)	2158-3234

Conference

Conference	19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019
Country/Territory	Canada
City	Ottawa
Period	8/07/19 → 12/07/19

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/NUSOD.2019.8807051

Cite this

Arkani, R., Broderick, C. A., & O'Reilly, E. P. (2019). Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells. In K. Hinzer, & J. Piprek (Eds.), 19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019 (pp. 53-54). Article 8807051 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD; Vol. 2019-July). IEEE Computer Society. https://doi.org/10.1109/NUSOD.2019.8807051

Arkani, Reza ; Broderick, Christopher A. ; O'Reilly, Eoin P. / Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells. 19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019. editor / Karin Hinzer ; Joachim Piprek. IEEE Computer Society, 2019. pp. 53-54 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD).

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title = "Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells",

abstract = "Type-II quantum-confined heterostructures constitute a promising approach to realise highly efficient intermediate band solar cells (IBSCs), due to their long radiative lifetimes and the flexibility with which their electronic and optical properties can be engineered. To quantify the potential of type-II GaSb/GaAs quantum rings (QRs) for IBSC applications we undertake a theoretical investigation of their electronic properties. In these heterostructures the intermediate band is formed by bound hole states which are strongly localised within the QR. We demonstrate that the unconventional QR geometry provides a flexible platform to engineer the valence band structure, enabling optimum energy gaps - which maximise overall IBSC efficiency - to be obtained via structural optimisation. Our results emphasise that utilising QRs for IBSC applications requires careful control of QR morphology in epitaxial growth.",

author = "Reza Arkani and Broderick, \{Christopher A.\} and O'Reilly, \{Eoin P.\}",

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language = "English",

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Arkani, R, Broderick, CA & O'Reilly, EP 2019, Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells. in K Hinzer & J Piprek (eds), 19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019., 8807051, Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD, vol. 2019-July, IEEE Computer Society, pp. 53-54, 19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019, Ottawa, Canada, 8/07/19. https://doi.org/10.1109/NUSOD.2019.8807051

Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells. / Arkani, Reza; Broderick, Christopher A.; O'Reilly, Eoin P.
19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019. ed. / Karin Hinzer; Joachim Piprek. IEEE Computer Society, 2019. p. 53-54 8807051 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD; Vol. 2019-July).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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AB - Type-II quantum-confined heterostructures constitute a promising approach to realise highly efficient intermediate band solar cells (IBSCs), due to their long radiative lifetimes and the flexibility with which their electronic and optical properties can be engineered. To quantify the potential of type-II GaSb/GaAs quantum rings (QRs) for IBSC applications we undertake a theoretical investigation of their electronic properties. In these heterostructures the intermediate band is formed by bound hole states which are strongly localised within the QR. We demonstrate that the unconventional QR geometry provides a flexible platform to engineer the valence band structure, enabling optimum energy gaps - which maximise overall IBSC efficiency - to be obtained via structural optimisation. Our results emphasise that utilising QRs for IBSC applications requires careful control of QR morphology in epitaxial growth.

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Arkani R, Broderick CA, O'Reilly EP. Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells. In Hinzer K, Piprek J, editors, 19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019. IEEE Computer Society. 2019. p. 53-54. 8807051. (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD). doi: 10.1109/NUSOD.2019.8807051

Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells

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