Bandwidth optimization of germanium-doped silicon optical modulator for high-speed applications

  • Darpan Mishra
  • , Manoranjan Minz
  • , Ramesh Kumar Sonkar
  • , Mohd Mansoor Khan

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

This paper analyzes a germanium-doped silicon traveling wave Mach-Zehnder modulator (TWMZM) for high speed operation at 1550 nm wavelength. Single arm drive modulator performance using non-return-to-zero on-off keying (NRZ-OOK) driving scheme has been investigated. The phase-loss characteristics of the graded-index silicon-germanium PN phase shifter have been determined numerically. The traveling wave electrode has been designed for 1.5 mm long phase shifter. The 3 dB modulation bandwidth of the designed TWMZM is calculated to be 31 GHz at-2 V and an error-free operation of 59 Gbps has been obtained for 2 V peak-to-peak drive voltage with an extinction of ∼6 dB.

Original languageEnglish
Title of host publicationNanophotonics and Micro/Nano Optics V
EditorsZhiping Zhou, Kazumi Wada, Limin Tong
PublisherSPIE
ISBN (Electronic)9781510631038
DOIs
Publication statusPublished - 2019
Externally publishedYes
EventNanophotonics and Micro/Nano Optics V 2019 - Hangzhou, China
Duration: 21 Oct 201923 Oct 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11193
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceNanophotonics and Micro/Nano Optics V 2019
Country/TerritoryChina
CityHangzhou
Period21/10/1923/10/19

Keywords

  • Mach-Zehnder modulator
  • phase shifter
  • silicon germanium
  • traveling wave electrode

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