Beyond-Si materials and devices for more Moore and more than Moore applications

N. Collaert; A. Alian; H. Arimura; G. Boccardi; G. Eneman; J. Franco; Ts Ivanov; D. Lin; J. Mitard; S. Ramesh; R. Rooyackers; M. Schaekers; A. Sibaya-Hernandez; S. Sioncke; Q. Smets; A. Vais; A. Vandooren; A. Veloso; A. Verhulst; D. Verreck; N. Waldron; A. Walke; L. Witters; H. Yu; X. Zhou; A. V.Y. Thean

doi:10.1109/ICICDT.2016.7542050

Beyond-Si materials and devices for more Moore and more than Moore applications

N. Collaert
, A. Alian
, H. Arimura
, G. Boccardi
, G. Eneman
, J. Franco
, Ts Ivanov
, D. Lin
, J. Mitard
, S. Ramesh
, R. Rooyackers
, M. Schaekers
, A. Sibaya-Hernandez
, S. Sioncke
, Q. Smets
, A. Vais
, A. Vandooren
, A. Veloso
, A. Verhulst
, D. Verreck

N. Waldron, A. Walke, L. Witters, H. Yu, X. Zhou, A. V.Y. Thean

Interuniversitair Micro-Elektronica Centrum

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed. Next to that, the advantages of tunnel FETs, vertical logic and in general heterogeneous integration will be highlighted.

Original language	English
Title of host publication	IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509008278
DOIs	https://doi.org/10.1109/ICICDT.2016.7542050
Publication status	Published - 10 Aug 2016
Externally published	Yes
Event	2016 IEEE Joint Conference on International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016 - Ho Chi Minh City, Viet Nam Duration: 27 Jun 2016 → 29 Jun 2016

Publication series

Name	IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016

Conference

Conference	2016 IEEE Joint Conference on International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016
Country/Territory	Viet Nam
City	Ho Chi Minh City
Period	27/06/16 → 29/06/16

Keywords

heterogeneous integration
high mobility materials
tunnel FET
vertical devices

Access to Document

10.1109/ICICDT.2016.7542050

Cite this

Collaert, N., Alian, A., Arimura, H., Boccardi, G., Eneman, G., Franco, J., Ivanov, T., Lin, D., Mitard, J., Ramesh, S., Rooyackers, R., Schaekers, M., Sibaya-Hernandez, A., Sioncke, S., Smets, Q., Vais, A., Vandooren, A., Veloso, A., Verhulst, A., ... Thean, A. V. Y. (2016). Beyond-Si materials and devices for more Moore and more than Moore applications. In IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016 Article 7542050 (IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICICDT.2016.7542050

Collaert, N. ; Alian, A. ; Arimura, H. et al. / Beyond-Si materials and devices for more Moore and more than Moore applications. IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016).

@inproceedings{652e09b562454c93bf64d6a06d665386,

title = "Beyond-Si materials and devices for more Moore and more than Moore applications",

abstract = "In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed. Next to that, the advantages of tunnel FETs, vertical logic and in general heterogeneous integration will be highlighted.",

keywords = "heterogeneous integration, high mobility materials, tunnel FET, vertical devices",

author = "N. Collaert and A. Alian and H. Arimura and G. Boccardi and G. Eneman and J. Franco and Ts Ivanov and D. Lin and J. Mitard and S. Ramesh and R. Rooyackers and M. Schaekers and A. Sibaya-Hernandez and S. Sioncke and Q. Smets and A. Vais and A. Vandooren and A. Veloso and A. Verhulst and D. Verreck and N. Waldron and A. Walke and L. Witters and H. Yu and X. Zhou and Thean, \{A. V.Y.\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE Joint Conference on International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016 ; Conference date: 27-06-2016 Through 29-06-2016",

year = "2016",

month = aug,

day = "10",

doi = "10.1109/ICICDT.2016.7542050",

language = "English",

series = "IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016",

address = "United States",

}

Collaert, N, Alian, A, Arimura, H, Boccardi, G, Eneman, G, Franco, J, Ivanov, T, Lin, D, Mitard, J, Ramesh, S, Rooyackers, R, Schaekers, M, Sibaya-Hernandez, A, Sioncke, S, Smets, Q, Vais, A, Vandooren, A, Veloso, A, Verhulst, A, Verreck, D, Waldron, N, Walke, A, Witters, L, Yu, H, Zhou, X & Thean, AVY 2016, Beyond-Si materials and devices for more Moore and more than Moore applications. in IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016., 7542050, IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE Joint Conference on International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016, Ho Chi Minh City, Viet Nam, 27/06/16. https://doi.org/10.1109/ICICDT.2016.7542050

Beyond-Si materials and devices for more Moore and more than Moore applications. / Collaert, N.; Alian, A.; Arimura, H. et al.
IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7542050 (IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Beyond-Si materials and devices for more Moore and more than Moore applications

AU - Collaert, N.

AU - Alian, A.

AU - Arimura, H.

AU - Boccardi, G.

AU - Eneman, G.

AU - Franco, J.

AU - Ivanov, Ts

AU - Lin, D.

AU - Mitard, J.

AU - Ramesh, S.

AU - Rooyackers, R.

AU - Schaekers, M.

AU - Sibaya-Hernandez, A.

AU - Sioncke, S.

AU - Smets, Q.

AU - Vais, A.

AU - Vandooren, A.

AU - Veloso, A.

AU - Verhulst, A.

AU - Verreck, D.

AU - Waldron, N.

AU - Walke, A.

AU - Witters, L.

AU - Yu, H.

AU - Zhou, X.

AU - Thean, A. V.Y.

PY - 2016/8/10

Y1 - 2016/8/10

N2 - In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed. Next to that, the advantages of tunnel FETs, vertical logic and in general heterogeneous integration will be highlighted.

AB - In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed. Next to that, the advantages of tunnel FETs, vertical logic and in general heterogeneous integration will be highlighted.

KW - heterogeneous integration

KW - high mobility materials

KW - tunnel FET

KW - vertical devices

UR - https://www.scopus.com/pages/publications/84988373691

U2 - 10.1109/ICICDT.2016.7542050

DO - 10.1109/ICICDT.2016.7542050

M3 - Conference proceeding

AN - SCOPUS:84988373691

T3 - IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016

BT - IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE Joint Conference on International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016

Y2 - 27 June 2016 through 29 June 2016

ER -

Collaert N, Alian A, Arimura H, Boccardi G, Eneman G, Franco J et al. Beyond-Si materials and devices for more Moore and more than Moore applications. In IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7542050. (IEEE Joint Conference - International Conference on IC Design and Technology, ICICDT 2016 and Solid State Systems Symposium, 4S 2016). doi: 10.1109/ICICDT.2016.7542050

Beyond-Si materials and devices for more Moore and more than Moore applications

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Keywords

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