TY - GEN
T1 - Bipolar Resistive RAM memory. A Monte Carlo study (video)
AU - Aldana, Samuel
AU - Roldán Aranda, Juan Bautista
AU - Garcia Fernandez, Pedro
AU - Suñé, Jordi
AU - Romero-Zaliz, Rocio
AU - Jiménez-Molinos, Francisco
AU - Long, Shibing
AU - Gómez-Campos, Francisco
AU - Ming, Liu
PY - 2017/12/20
Y1 - 2017/12/20
N2 - Complementary material to “Aldana, S., Roldán, J. B., García-Fernández, P., Suñe, J., Romero-Zaliz, R., Jiménez-Molinos, F., Long, S., Gómez-Campos, F., Liu, M., “An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach”, Journal of Applied Physics, 123(15), 154501, 2018”.
AB - Complementary material to “Aldana, S., Roldán, J. B., García-Fernández, P., Suñe, J., Romero-Zaliz, R., Jiménez-Molinos, F., Long, S., Gómez-Campos, F., Liu, M., “An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach”, Journal of Applied Physics, 123(15), 154501, 2018”.
UR - https://www.youtube.com/watch?v=G0YacFensM4
M3 - Other output
ER -