Bipolar Resistive RAM memory. A Monte Carlo study (video)

Samuel Aldana; Juan Bautista Roldán Aranda; Pedro Garcia Fernandez; Jordi Suñé; Rocio Romero-Zaliz; Francisco Jiménez-Molinos; Shibing Long; Francisco Gómez-Campos; Liu Ming

Bipolar Resistive RAM memory. A Monte Carlo study (video)

Samuel Aldana
, Juan Bautista Roldán Aranda
, Pedro Garcia Fernandez
, Jordi Suñé
, Rocio Romero-Zaliz
, Francisco Jiménez-Molinos
, Shibing Long
, Francisco Gómez-Campos
, Liu Ming

University of Granada
University of Granada
Universitat Autònoma de Barcelona
CAS - Institute of Microelectronics

Research output: Other output › peer-review

Abstract

Complementary material to “Aldana, S., Roldán, J. B., García-Fernández, P., Suñe, J., Romero-Zaliz, R., Jiménez-Molinos, F., Long, S., Gómez-Campos, F., Liu, M., “An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach”, Journal of Applied Physics, 123(15), 154501, 2018”.

Original language	Undefined/Unknown
Type	Video
Publication status	Published - 20 Dec 2017
Externally published	Yes

Cite this

@misc{c43a95dc665f41978c54a20aa1073c52,

title = "Bipolar Resistive RAM memory. A Monte Carlo study (video)",

abstract = "Complementary material to “Aldana, S., Rold{\'a}n, J. B., Garc{\'i}a-Fern{\'a}ndez, P., Su{\~n}e, J., Romero-Zaliz, R., Jim{\'e}nez-Molinos, F., Long, S., G{\'o}mez-Campos, F., Liu, M., “An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach”, Journal of Applied Physics, 123(15), 154501, 2018”.",

author = "Samuel Aldana and \{Rold{\'a}n Aranda\}, \{Juan Bautista\} and \{Garcia Fernandez\}, Pedro and Jordi Su{\~n}{\'e} and Rocio Romero-Zaliz and Francisco Jim{\'e}nez-Molinos and Shibing Long and Francisco G{\'o}mez-Campos and Liu Ming",

year = "2017",

month = dec,

day = "20",

language = "Undefined/Unknown",

type = "Other",

}

TY - GEN

T1 - Bipolar Resistive RAM memory. A Monte Carlo study (video)

AU - Aldana, Samuel

AU - Roldán Aranda, Juan Bautista

AU - Garcia Fernandez, Pedro

AU - Suñé, Jordi

AU - Romero-Zaliz, Rocio

AU - Jiménez-Molinos, Francisco

AU - Long, Shibing

AU - Gómez-Campos, Francisco

AU - Ming, Liu

PY - 2017/12/20

Y1 - 2017/12/20

N2 - Complementary material to “Aldana, S., Roldán, J. B., García-Fernández, P., Suñe, J., Romero-Zaliz, R., Jiménez-Molinos, F., Long, S., Gómez-Campos, F., Liu, M., “An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach”, Journal of Applied Physics, 123(15), 154501, 2018”.

AB - Complementary material to “Aldana, S., Roldán, J. B., García-Fernández, P., Suñe, J., Romero-Zaliz, R., Jiménez-Molinos, F., Long, S., Gómez-Campos, F., Liu, M., “An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach”, Journal of Applied Physics, 123(15), 154501, 2018”.

UR - https://www.youtube.com/watch?v=G0YacFensM4

M3 - Other output

ER -

Bipolar Resistive RAM memory. A Monte Carlo study (video)

Abstract

Other files and links

Research output

An in-depth description of bipolar resistive switching in Cu/HfOx/Pt devices, a 3D kinetic Monte Carlo simulation approach

Cite this