Bistable Gated Bipolar Device

Russell Duane; Alan Mathewson; Ann Concannon

doi:10.1109/LED.2003.817374

Bistable Gated Bipolar Device

Russell Duane
, Alan Mathewson
, Ann Concannon

Tyndall IPES (Integrated Power)

Research output: Contribution to journal › Article › peer-review

Abstract

We report a semiconductor device that exhibits a negative differential resistance characteristic. The device has the same structure as metal-oxide-semiconductor (MOS) transistors currently used in integrated circuits. Biasing the structure in the subthreshold regime and sweeping the bulk bias results in the negative differential resistance characteristic. The device exhibits a peak valley current ratio of approximately 52 at room temperature while drawing ten nanoampers of current which is of sufficiently low power for ultra-large scale integration (ULSI) applications.

Original language	English
Pages (from-to)	661-663
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	10
DOIs	https://doi.org/10.1109/LED.2003.817374
Publication status	Published - Oct 2003

Keywords

MOS devices
Negative resistance devices

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10.1109/LED.2003.817374

Cite this

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title = "Bistable Gated Bipolar Device",

abstract = "We report a semiconductor device that exhibits a negative differential resistance characteristic. The device has the same structure as metal-oxide-semiconductor (MOS) transistors currently used in integrated circuits. Biasing the structure in the subthreshold regime and sweeping the bulk bias results in the negative differential resistance characteristic. The device exhibits a peak valley current ratio of approximately 52 at room temperature while drawing ten nanoampers of current which is of sufficiently low power for ultra-large scale integration (ULSI) applications.",

keywords = "MOS devices, Negative resistance devices",

author = "Russell Duane and Alan Mathewson and Ann Concannon",

year = "2003",

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AU - Mathewson, Alan

AU - Concannon, Ann

PY - 2003/10

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N2 - We report a semiconductor device that exhibits a negative differential resistance characteristic. The device has the same structure as metal-oxide-semiconductor (MOS) transistors currently used in integrated circuits. Biasing the structure in the subthreshold regime and sweeping the bulk bias results in the negative differential resistance characteristic. The device exhibits a peak valley current ratio of approximately 52 at room temperature while drawing ten nanoampers of current which is of sufficiently low power for ultra-large scale integration (ULSI) applications.

AB - We report a semiconductor device that exhibits a negative differential resistance characteristic. The device has the same structure as metal-oxide-semiconductor (MOS) transistors currently used in integrated circuits. Biasing the structure in the subthreshold regime and sweeping the bulk bias results in the negative differential resistance characteristic. The device exhibits a peak valley current ratio of approximately 52 at room temperature while drawing ten nanoampers of current which is of sufficiently low power for ultra-large scale integration (ULSI) applications.

KW - MOS devices

KW - Negative resistance devices

UR - https://www.scopus.com/pages/publications/0141918444

U2 - 10.1109/LED.2003.817374

DO - 10.1109/LED.2003.817374

M3 - Article

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SN - 0741-3106

VL - 24

SP - 661

EP - 663

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

Bistable Gated Bipolar Device

Abstract

Keywords

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