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Bistable Gated Bipolar Device
Russell Duane
, Alan Mathewson
, Ann Concannon
Tyndall IPES (Integrated Power)
National Semiconductor Corporation
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Engineering
Bistables
100%
Resistance Characteristic
100%
Negative Differential Resistance
100%
Room Temperature
50%
Integrated Circuit
50%
Semiconductor Device
50%
Metal Oxide Semiconductor
50%
Current Ratio
50%
ULSI Circuits
50%
Transistor
50%
Material Science
Electronic Circuit
100%
Semiconductor Device
100%
Metal Oxide
100%
Transistor
100%
Oxide Semiconductor
100%