Bistable nanoelectromechanical devices

Kirk J. Ziegler; Daniel M. Lyons; Justin D. Holmes; Donats Erts; Boris Polyakov; Håkan Olin; Krister Svensson; Eva Olsson

doi:10.1063/1.1751622

Bistable nanoelectromechanical devices

Kirk J. Ziegler
, Daniel M. Lyons
, Justin D. Holmes
, Donats Erts
, Boris Polyakov
, Håkan Olin
, Krister Svensson
, Eva Olsson

School of Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

The force interactions of silicon and germanium nanowires with gold electrodes were analyzed. The current voltage data showed linear behavior between gold electrode and silicon nanowires but for germanium nanowires, they were point of contact dependant. It was found that TEM-STM demonstrated bistable silicon and germanium nanowire based nanoelectromechanical programable read-only memory (NEMPROM) devices. Analysis shows that the devices exhibited low switching potential and high stability, that made them ideal low-leakage electronic devices.

Original language	English
Pages (from-to)	4074-4076
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	20
DOIs	https://doi.org/10.1063/1.1751622
Publication status	Published - 17 May 2004

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https://hdl.handle.net/10468/4398Licence: CC BY-NC-ND

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title = "Bistable nanoelectromechanical devices",

abstract = "The force interactions of silicon and germanium nanowires with gold electrodes were analyzed. The current voltage data showed linear behavior between gold electrode and silicon nanowires but for germanium nanowires, they were point of contact dependant. It was found that TEM-STM demonstrated bistable silicon and germanium nanowire based nanoelectromechanical programable read-only memory (NEMPROM) devices. Analysis shows that the devices exhibited low switching potential and high stability, that made them ideal low-leakage electronic devices.",

author = "Ziegler, \{Kirk J.\} and Lyons, \{Daniel M.\} and Holmes, \{Justin D.\} and Donats Erts and Boris Polyakov and H{\aa}kan Olin and Krister Svensson and Eva Olsson",

year = "2004",

month = may,

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doi = "10.1063/1.1751622",

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T1 - Bistable nanoelectromechanical devices

AU - Ziegler, Kirk J.

AU - Lyons, Daniel M.

AU - Holmes, Justin D.

AU - Erts, Donats

AU - Polyakov, Boris

AU - Olin, Håkan

AU - Svensson, Krister

AU - Olsson, Eva

PY - 2004/5/17

Y1 - 2004/5/17

N2 - The force interactions of silicon and germanium nanowires with gold electrodes were analyzed. The current voltage data showed linear behavior between gold electrode and silicon nanowires but for germanium nanowires, they were point of contact dependant. It was found that TEM-STM demonstrated bistable silicon and germanium nanowire based nanoelectromechanical programable read-only memory (NEMPROM) devices. Analysis shows that the devices exhibited low switching potential and high stability, that made them ideal low-leakage electronic devices.

AB - The force interactions of silicon and germanium nanowires with gold electrodes were analyzed. The current voltage data showed linear behavior between gold electrode and silicon nanowires but for germanium nanowires, they were point of contact dependant. It was found that TEM-STM demonstrated bistable silicon and germanium nanowire based nanoelectromechanical programable read-only memory (NEMPROM) devices. Analysis shows that the devices exhibited low switching potential and high stability, that made them ideal low-leakage electronic devices.

UR - https://www.scopus.com/pages/publications/2942650906

U2 - 10.1063/1.1751622

DO - 10.1063/1.1751622

M3 - Article

AN - SCOPUS:2942650906

SN - 0003-6951

VL - 84

SP - 4074

EP - 4076

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Bistable nanoelectromechanical devices

Abstract

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