Abstract
Block copolymer lithography based on block copolymer (BCP) self-assembly can be used to develop soft mask nanoscale templates for subsequent pattern transfer to generate substrate features. Self-assembly of lamellar polystyrene-b-polymethylmethacrylate BCP of varying molecular weights to generate silicon nanoscale features is reported here. It has also been demonstrated that the feature size can be controlled by a plasma over-etch process and discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 318-323 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 522 |
| DOIs | |
| Publication status | Published - 1 Nov 2012 |
Keywords
- Block copolymer
- Lithography
- Over-etching
- Plasma etching
- Polystyrene-b-polymethylmethacrylate
- Self-assembly
- Silicon nanowires