Blue-green laser diode operation of CdZnSe/ZnSe MQW structures grown on InGaP band offset reduction layer

M. Onomura; M. Ishikawa; Y. Nishikawa; S. Saito; P. J. Parbrook; K. Nitta; J. Rennie; G. Hatakoshi

doi:10.1049/el:19931413

Blue-green laser diode operation of CdZnSe/ZnSe MQW structures grown on InGaP band offset reduction layer

M. Onomura
, M. Ishikawa
, Y. Nishikawa
, S. Saito
, P. J. Parbrook
, K. Nitta
, J. Rennie
, G. Hatakoshi

Toshiba Corporation

Research output: Contribution to journal › Article › peer-review

Abstract

A novel contact technology using In(Ga,Al)P layers, lattice matched to p-type GaAs, is proposed for low voltage operation in ZnSe-based laser diodes (LDs). Laser operation is demonstrated at 77 K in CdZnSe/ZnSe multiquantum well LDs grown on InGaP band offset reduction layers for the first time.

Original language	English
Pages (from-to)	2114-2115
Number of pages	2
Journal	Electronics Letters
Volume	29
Issue number	24
DOIs	https://doi.org/10.1049/el:19931413
Publication status	Published - Nov 1993
Externally published	Yes

Keywords

Lasers
Semiconductor lasers

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10.1049/el:19931413

Cite this

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title = "Blue-green laser diode operation of CdZnSe/ZnSe MQW structures grown on InGaP band offset reduction layer",

abstract = "A novel contact technology using In(Ga,Al)P layers, lattice matched to p-type GaAs, is proposed for low voltage operation in ZnSe-based laser diodes (LDs). Laser operation is demonstrated at 77 K in CdZnSe/ZnSe multiquantum well LDs grown on InGaP band offset reduction layers for the first time.",

keywords = "Lasers, Semiconductor lasers",

author = "M. Onomura and M. Ishikawa and Y. Nishikawa and S. Saito and Parbrook, \{P. J.\} and K. Nitta and J. Rennie and G. Hatakoshi",

year = "1993",

month = nov,

doi = "10.1049/el:19931413",

language = "English",

volume = "29",

pages = "2114--2115",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "24",

}

TY - JOUR

T1 - Blue-green laser diode operation of CdZnSe/ZnSe MQW structures grown on InGaP band offset reduction layer

AU - Onomura, M.

AU - Ishikawa, M.

AU - Nishikawa, Y.

AU - Saito, S.

AU - Parbrook, P. J.

AU - Nitta, K.

AU - Rennie, J.

AU - Hatakoshi, G.

PY - 1993/11

Y1 - 1993/11

N2 - A novel contact technology using In(Ga,Al)P layers, lattice matched to p-type GaAs, is proposed for low voltage operation in ZnSe-based laser diodes (LDs). Laser operation is demonstrated at 77 K in CdZnSe/ZnSe multiquantum well LDs grown on InGaP band offset reduction layers for the first time.

AB - A novel contact technology using In(Ga,Al)P layers, lattice matched to p-type GaAs, is proposed for low voltage operation in ZnSe-based laser diodes (LDs). Laser operation is demonstrated at 77 K in CdZnSe/ZnSe multiquantum well LDs grown on InGaP band offset reduction layers for the first time.

KW - Lasers

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/0027698283

U2 - 10.1049/el:19931413

DO - 10.1049/el:19931413

M3 - Article

AN - SCOPUS:0027698283

SN - 0013-5194

VL - 29

SP - 2114

EP - 2115

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

Blue-green laser diode operation of CdZnSe/ZnSe MQW structures grown on InGaP band offset reduction layer

Abstract

Keywords

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