Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450-470 nm

  • G. P. Yablonskii
  • , E. V. Lutsenko
  • , V. N. Pavlovskii
  • , I. P. Marko
  • , A. L. Gurskii
  • , Vitaly Z. Zubialevich
  • , A. V. Mudryi
  • , O. Schön
  • , H. Protzmann
  • , M. Lünenbürger
  • , B. Schineller
  • , M. Heuken
  • , H. Kalisch
  • , K. Heime

Research output: Contribution to journalArticlepeer-review

Abstract

Optically pumped lasing in the wavelength range of 450-470 nm in InGaN/GaN multiple-quantum-well heterostructures grown by metalorganic vapor phase epitaxy was achieved and investigated. The energy and power per pulse of the laser were 80 nJ and 10 W correspondingly for one facet at room temperature. The far-field patterns of the laser emission consisted of three light spots near the angles of +30°, -15°, and -45°. The highest operating temperature was 450 K. The photoluminescence and photoluminescence excitation spectrum structures suggest that the quantum dots inside the quantum wells are involved in the recombination mechanism.

Original languageEnglish
Pages (from-to)1953-1955
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number13
DOIs
Publication statusPublished - 24 Sep 2001
Externally publishedYes

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