Abstract
Optically pumped lasing in the wavelength range of 450-470 nm in InGaN/GaN multiple-quantum-well heterostructures grown by metalorganic vapor phase epitaxy was achieved and investigated. The energy and power per pulse of the laser were 80 nJ and 10 W correspondingly for one facet at room temperature. The far-field patterns of the laser emission consisted of three light spots near the angles of +30°, -15°, and -45°. The highest operating temperature was 450 K. The photoluminescence and photoluminescence excitation spectrum structures suggest that the quantum dots inside the quantum wells are involved in the recombination mechanism.
| Original language | English |
|---|---|
| Pages (from-to) | 1953-1955 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 79 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 24 Sep 2001 |
| Externally published | Yes |