Boron diffusion in amorphous silicon and the role of fluorine

R. Duffy; V. C. Venezia; A. Heringa; B. J. Pawlak; M. J.P. Hopstaken; G. C.J. Maas; Y. Tamminga; T. Dao; F. Roozeboom; L. Pelaz

doi:10.1063/1.1751225

Boron diffusion in amorphous silicon and the role of fluorine

R. Duffy
, V. C. Venezia
, A. Heringa
, B. J. Pawlak
, M. J.P. Hopstaken
, G. C.J. Maas
, Y. Tamminga
, T. Dao
, F. Roozeboom
, L. Pelaz

Research output: Contribution to journal › Article › peer-review

Abstract

The boron diffusion at high concentrations was investigated in amorphous silicon pre-amorphized by germanium ion implantation. It was observed that boron diffuses in amorphous silicon at higher concentrations prior to recrystallization. The analysis of boron dopant profiles was performed by using secondary ion mass spectrometry (SIMS), using 750 eV O₂⁺ primary ion with an oblique angle of incidence. The silicon amorphization depths were investigated using rutherford backscattering (RBS) channeling measurements. The results show that the addition of fluorine does not enhance the boron diffusivity in amorphous silicon.

Original language	English
Pages (from-to)	4283-4285
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	21
DOIs	https://doi.org/10.1063/1.1751225
Publication status	Published - 24 May 2004
Externally published	Yes

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10.1063/1.1751225

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title = "Boron diffusion in amorphous silicon and the role of fluorine",

abstract = "The boron diffusion at high concentrations was investigated in amorphous silicon pre-amorphized by germanium ion implantation. It was observed that boron diffuses in amorphous silicon at higher concentrations prior to recrystallization. The analysis of boron dopant profiles was performed by using secondary ion mass spectrometry (SIMS), using 750 eV O2+ primary ion with an oblique angle of incidence. The silicon amorphization depths were investigated using rutherford backscattering (RBS) channeling measurements. The results show that the addition of fluorine does not enhance the boron diffusivity in amorphous silicon.",

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year = "2004",

month = may,

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doi = "10.1063/1.1751225",

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volume = "84",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Boron diffusion in amorphous silicon and the role of fluorine

AU - Duffy, R.

AU - Venezia, V. C.

AU - Heringa, A.

AU - Pawlak, B. J.

AU - Hopstaken, M. J.P.

AU - Maas, G. C.J.

AU - Tamminga, Y.

AU - Dao, T.

AU - Roozeboom, F.

AU - Pelaz, L.

PY - 2004/5/24

Y1 - 2004/5/24

N2 - The boron diffusion at high concentrations was investigated in amorphous silicon pre-amorphized by germanium ion implantation. It was observed that boron diffuses in amorphous silicon at higher concentrations prior to recrystallization. The analysis of boron dopant profiles was performed by using secondary ion mass spectrometry (SIMS), using 750 eV O2+ primary ion with an oblique angle of incidence. The silicon amorphization depths were investigated using rutherford backscattering (RBS) channeling measurements. The results show that the addition of fluorine does not enhance the boron diffusivity in amorphous silicon.

AB - The boron diffusion at high concentrations was investigated in amorphous silicon pre-amorphized by germanium ion implantation. It was observed that boron diffuses in amorphous silicon at higher concentrations prior to recrystallization. The analysis of boron dopant profiles was performed by using secondary ion mass spectrometry (SIMS), using 750 eV O2+ primary ion with an oblique angle of incidence. The silicon amorphization depths were investigated using rutherford backscattering (RBS) channeling measurements. The results show that the addition of fluorine does not enhance the boron diffusivity in amorphous silicon.

UR - https://www.scopus.com/pages/publications/2942637993

U2 - 10.1063/1.1751225

DO - 10.1063/1.1751225

M3 - Article

AN - SCOPUS:2942637993

SN - 0003-6951

VL - 84

SP - 4283

EP - 4285

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Boron diffusion in amorphous silicon and the role of fluorine

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