Boron diffusion in amorphous silicon

V. C. Venezia; R. Duffy; L. Pelaz; M. J.P. Hopstaken; G. C.J. Maas; T. Dao; Y. Tamminga; P. Graat

doi:10.1016/j.mseb.2005.08.079

Boron diffusion in amorphous silicon

V. C. Venezia
, R. Duffy
, L. Pelaz
, M. J.P. Hopstaken
, G. C.J. Maas
, T. Dao
, Y. Tamminga
, P. Graat

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 °C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of ∼2.1 eV.

Original language	English
Pages (from-to)	245-248
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	124-125
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/j.mseb.2005.08.079
Publication status	Published - 5 Dec 2005
Externally published	Yes

Keywords

Amorphous
Boron
Silicon

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.mseb.2005.08.079

Cite this

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title = "Boron diffusion in amorphous silicon",

abstract = "We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 °C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of ∼2.1 eV.",

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author = "Venezia, \{V. C.\} and R. Duffy and L. Pelaz and Hopstaken, \{M. J.P.\} and Maas, \{G. C.J.\} and T. Dao and Y. Tamminga and P. Graat",

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month = dec,

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doi = "10.1016/j.mseb.2005.08.079",

language = "English",

volume = "124-125",

pages = "245--248",

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TY - JOUR

T1 - Boron diffusion in amorphous silicon

AU - Venezia, V. C.

AU - Duffy, R.

AU - Pelaz, L.

AU - Hopstaken, M. J.P.

AU - Maas, G. C.J.

AU - Dao, T.

AU - Tamminga, Y.

AU - Graat, P.

PY - 2005/12/5

Y1 - 2005/12/5

N2 - We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 °C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of ∼2.1 eV.

AB - We have investigated B diffusion in pre-amorphized silicon. In our experiments, the crystalline surface layer of silicon-on-insulator (SOI) substrates was completely amorphized by Ge ion implantation. Using SOI substrates in this fashion suppressed solid-phase-epitaxy regrowth, making it possible to investigate B diffusion in pre-amorphous silicon over a wider range of temperatures (500-650 °C) and times (5-1000 s) than has previously been reported. Diffusivities were determined with the aid of computational processes modeling. The results from this work demonstrate the B diffusion in a-Si is concentration dependent, exhibits a transient enhanced diffusion, and possesses an Arhennius behavior with activation energy of ∼2.1 eV.

KW - Amorphous

KW - Boron

KW - Silicon

UR - https://www.scopus.com/pages/publications/27844454291

U2 - 10.1016/j.mseb.2005.08.079

DO - 10.1016/j.mseb.2005.08.079

M3 - Article

AN - SCOPUS:27844454291

SN - 0921-5107

VL - 124-125

SP - 245

EP - 248

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - SUPPL.

ER -

Boron diffusion in amorphous silicon

Abstract

Keywords

UN SDGs

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