Boron pocket and channel deactivation in nMOS transistors with SPER junctions

In this paper, we demonstrate the consequences of extension junction formation by low-temperature solid-phase-epitaxial-regrowth in nMOS transistors. Atomistic simulations, experimental device results, sheet resistance, and scanning spreading resistance microscopy data indicate that the high concentration of silicon interstitials associated with the end-of-range defect band promote the local formation of boron-interstitial clusters, and thus deactivate boron in the pocket and channel. These inactive clusters will dissolve after the high concentration silicon interstitial region of the end-of-range defect band has been annihilated. This nMOS requirement is in direct opposition to the pMOS case where avoidance of defect band dissolution is desired, to prevent deactivation of the high concentration boron extension profile.