Boron redistribution in pre-amorphized Si during thermal annealing

Lourdes Pelaz; Maria Aboy; Ray Duffy; Vincent Venezia; Luis A. Marqués; Pedro López; Iván Santos; Jesús Hernández; Luis A. Bailón; Juan Barbolla

doi:10.1109/SCED.2005.1504473

Boron redistribution in pre-amorphized Si during thermal annealing

Lourdes Pelaz
, Maria Aboy
, Ray Duffy
, Vincent Venezia
, Luis A. Marqués
, Pedro López
, Iván Santos
, Jesús Hernández
, Luis A. Bailón
, Juan Barbolla

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Experiments and simulations on B diffusion and activation in pre-amorphized Si are presented. B concentrations below 2×10²⁰ cm ^.3 experience significant diffusion while higher B concentration regions remain immobile forming electrically inactive B clusters during low temperature recrystallization. Subsequent annealing causes B redistribution. Uphill diffusion and B deactivation is followed by B clustering dissolution and tail diffusion during high temperature anneals.

Original language	English
Title of host publication	2005 Spanish Conference on Electron Devices, Proceedings
Pages	431-434
Number of pages	4
DOIs	https://doi.org/10.1109/SCED.2005.1504473
Publication status	Published - 2005
Externally published	Yes
Event	2005 Spanish Conference on Electron Devices - Tarragona, Spain Duration: 2 Feb 2005 → 4 Feb 2005

Publication series

Name	2005 Spanish Conference on Electron Devices, Proceedings
Volume	2005

Conference

Conference	2005 Spanish Conference on Electron Devices
Country/Territory	Spain
City	Tarragona
Period	2/02/05 → 4/02/05

Access to Document

10.1109/SCED.2005.1504473

Cite this

Pelaz, L., Aboy, M., Duffy, R., Venezia, V., Marqués, L. A., López, P., Santos, I., Hernández, J., Bailón, L. A., & Barbolla, J. (2005). Boron redistribution in pre-amorphized Si during thermal annealing. In 2005 Spanish Conference on Electron Devices, Proceedings (pp. 431-434). Article 1504473 (2005 Spanish Conference on Electron Devices, Proceedings; Vol. 2005). https://doi.org/10.1109/SCED.2005.1504473

@inproceedings{ad46b692fb6942b7826db95cf94808f5,

title = "Boron redistribution in pre-amorphized Si during thermal annealing",

abstract = "Experiments and simulations on B diffusion and activation in pre-amorphized Si are presented. B concentrations below 2×1020 cm .3 experience significant diffusion while higher B concentration regions remain immobile forming electrically inactive B clusters during low temperature recrystallization. Subsequent annealing causes B redistribution. Uphill diffusion and B deactivation is followed by B clustering dissolution and tail diffusion during high temperature anneals.",

author = "Lourdes Pelaz and Maria Aboy and Ray Duffy and Vincent Venezia and Marqu{\'e}s, \{Luis A.\} and Pedro L{\'o}pez and Iv{\'a}n Santos and Jes{\'u}s Hern{\'a}ndez and Bail{\'o}n, \{Luis A.\} and Juan Barbolla",

year = "2005",

doi = "10.1109/SCED.2005.1504473",

language = "English",

isbn = "0780388100",

series = "2005 Spanish Conference on Electron Devices, Proceedings",

pages = "431--434",

booktitle = "2005 Spanish Conference on Electron Devices, Proceedings",

note = "2005 Spanish Conference on Electron Devices ; Conference date: 02-02-2005 Through 04-02-2005",

}

Pelaz, L, Aboy, M, Duffy, R, Venezia, V, Marqués, LA, López, P, Santos, I, Hernández, J, Bailón, LA & Barbolla, J 2005, Boron redistribution in pre-amorphized Si during thermal annealing. in 2005 Spanish Conference on Electron Devices, Proceedings., 1504473, 2005 Spanish Conference on Electron Devices, Proceedings, vol. 2005, pp. 431-434, 2005 Spanish Conference on Electron Devices, Tarragona, Spain, 2/02/05. https://doi.org/10.1109/SCED.2005.1504473

Boron redistribution in pre-amorphized Si during thermal annealing. / Pelaz, Lourdes; Aboy, Maria; Duffy, Ray et al.
2005 Spanish Conference on Electron Devices, Proceedings. 2005. p. 431-434 1504473 (2005 Spanish Conference on Electron Devices, Proceedings; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Boron redistribution in pre-amorphized Si during thermal annealing

AU - Pelaz, Lourdes

AU - Aboy, Maria

AU - Duffy, Ray

AU - Venezia, Vincent

AU - Marqués, Luis A.

AU - López, Pedro

AU - Santos, Iván

AU - Hernández, Jesús

AU - Bailón, Luis A.

AU - Barbolla, Juan

PY - 2005

Y1 - 2005

N2 - Experiments and simulations on B diffusion and activation in pre-amorphized Si are presented. B concentrations below 2×1020 cm .3 experience significant diffusion while higher B concentration regions remain immobile forming electrically inactive B clusters during low temperature recrystallization. Subsequent annealing causes B redistribution. Uphill diffusion and B deactivation is followed by B clustering dissolution and tail diffusion during high temperature anneals.

AB - Experiments and simulations on B diffusion and activation in pre-amorphized Si are presented. B concentrations below 2×1020 cm .3 experience significant diffusion while higher B concentration regions remain immobile forming electrically inactive B clusters during low temperature recrystallization. Subsequent annealing causes B redistribution. Uphill diffusion and B deactivation is followed by B clustering dissolution and tail diffusion during high temperature anneals.

UR - https://www.scopus.com/pages/publications/33745711865

U2 - 10.1109/SCED.2005.1504473

DO - 10.1109/SCED.2005.1504473

M3 - Conference proceeding

AN - SCOPUS:33745711865

SN - 0780388100

SN - 9780780388109

T3 - 2005 Spanish Conference on Electron Devices, Proceedings

SP - 431

EP - 434

BT - 2005 Spanish Conference on Electron Devices, Proceedings

T2 - 2005 Spanish Conference on Electron Devices

Y2 - 2 February 2005 through 4 February 2005

ER -

Boron redistribution in pre-amorphized Si during thermal annealing

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this