Boron uphill diffusion during ultrashallow junction formation

R. Duffy; V. C. Venezia; A. Heringa; T. W.T. Hüsken; M. J.P. Hopstaken; N. E.B. Cowern; P. B. Griffin; C. C. Wang

doi:10.1063/1.1578512

Boron uphill diffusion during ultrashallow junction formation

R. Duffy
, V. C. Venezia
, A. Heringa
, T. W.T. Hüsken
, M. J.P. Hopstaken
, N. E.B. Cowern
, P. B. Griffin
, C. C. Wang

Research output: Contribution to journal › Article › peer-review

Abstract

The boron uphill diffusion phenomenon, observed during the low-temperature annealing of ultrashallow junctions was discussed. The effect was found to be enhanced by preamorphization. An increase in the depth of the preamorphized layer was found to increase the transient enhanced diffusion in the tail and reduce the uphill diffusion in the high concentration portion.

Original language	English
Pages (from-to)	3647-3649
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	21
DOIs	https://doi.org/10.1063/1.1578512
Publication status	Published - 26 May 2003
Externally published	Yes

Access to Document

10.1063/1.1578512

Cite this

@article{e2294b7b1f074e858a4b0b9830de2c57,

title = "Boron uphill diffusion during ultrashallow junction formation",

abstract = "The boron uphill diffusion phenomenon, observed during the low-temperature annealing of ultrashallow junctions was discussed. The effect was found to be enhanced by preamorphization. An increase in the depth of the preamorphized layer was found to increase the transient enhanced diffusion in the tail and reduce the uphill diffusion in the high concentration portion.",

author = "R. Duffy and Venezia, \{V. C.\} and A. Heringa and H{\"u}sken, \{T. W.T.\} and Hopstaken, \{M. J.P.\} and Cowern, \{N. E.B.\} and Griffin, \{P. B.\} and Wang, \{C. C.\}",

year = "2003",

month = may,

day = "26",

doi = "10.1063/1.1578512",

language = "English",

volume = "82",

pages = "3647--3649",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Boron uphill diffusion during ultrashallow junction formation

AU - Duffy, R.

AU - Venezia, V. C.

AU - Heringa, A.

AU - Hüsken, T. W.T.

AU - Hopstaken, M. J.P.

AU - Cowern, N. E.B.

AU - Griffin, P. B.

AU - Wang, C. C.

PY - 2003/5/26

Y1 - 2003/5/26

N2 - The boron uphill diffusion phenomenon, observed during the low-temperature annealing of ultrashallow junctions was discussed. The effect was found to be enhanced by preamorphization. An increase in the depth of the preamorphized layer was found to increase the transient enhanced diffusion in the tail and reduce the uphill diffusion in the high concentration portion.

AB - The boron uphill diffusion phenomenon, observed during the low-temperature annealing of ultrashallow junctions was discussed. The effect was found to be enhanced by preamorphization. An increase in the depth of the preamorphized layer was found to increase the transient enhanced diffusion in the tail and reduce the uphill diffusion in the high concentration portion.

UR - https://www.scopus.com/pages/publications/0038645959

U2 - 10.1063/1.1578512

DO - 10.1063/1.1578512

M3 - Article

AN - SCOPUS:0038645959

SN - 0003-6951

VL - 82

SP - 3647

EP - 3649

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Boron uphill diffusion during ultrashallow junction formation

Abstract

Access to Document

Other files and links

Fingerprint

Cite this