Broad area semiconductor lasers with improved near and far fields using enhanced current spreading

P. A. O'Brien; P. M.W. Skovgaard; J. G. McInerney; J. S. Roberts

doi:10.1049/el:19981337

Broad area semiconductor lasers with improved near and far fields using enhanced current spreading

P. A. O'Brien
, P. M.W. Skovgaard
, J. G. McInerney
, J. S. Roberts

University College Cork
University of Sheffield

Research output: Contribution to journal › Article › peer-review

Abstract

Improved near and far field distributions in broad area semiconductor lasers are demonstrated using a novel technique for smoothing the tranvserse current injection profile by introducing a thick (10μm) p-GaAs layer to increase carrier diffusion. This results in narrower and more symmetrical far fields compared to standard broad area lasers, especially when operating at high output powers.

Original language	English
Pages (from-to)	1943-1944
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	20
DOIs	https://doi.org/10.1049/el:19981337
Publication status	Published - 1 Oct 1998

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10.1049/el:19981337

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title = "Broad area semiconductor lasers with improved near and far fields using enhanced current spreading",

abstract = "Improved near and far field distributions in broad area semiconductor lasers are demonstrated using a novel technique for smoothing the tranvserse current injection profile by introducing a thick (10μm) p-GaAs layer to increase carrier diffusion. This results in narrower and more symmetrical far fields compared to standard broad area lasers, especially when operating at high output powers.",

author = "O'Brien, \{P. A.\} and Skovgaard, \{P. M.W.\} and McInerney, \{J. G.\} and Roberts, \{J. S.\}",

year = "1998",

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T1 - Broad area semiconductor lasers with improved near and far fields using enhanced current spreading

AU - O'Brien, P. A.

AU - Skovgaard, P. M.W.

AU - McInerney, J. G.

AU - Roberts, J. S.

PY - 1998/10/1

Y1 - 1998/10/1

N2 - Improved near and far field distributions in broad area semiconductor lasers are demonstrated using a novel technique for smoothing the tranvserse current injection profile by introducing a thick (10μm) p-GaAs layer to increase carrier diffusion. This results in narrower and more symmetrical far fields compared to standard broad area lasers, especially when operating at high output powers.

AB - Improved near and far field distributions in broad area semiconductor lasers are demonstrated using a novel technique for smoothing the tranvserse current injection profile by introducing a thick (10μm) p-GaAs layer to increase carrier diffusion. This results in narrower and more symmetrical far fields compared to standard broad area lasers, especially when operating at high output powers.

UR - https://www.scopus.com/pages/publications/0032179138

U2 - 10.1049/el:19981337

DO - 10.1049/el:19981337

M3 - Article

AN - SCOPUS:0032179138

SN - 0013-5194

VL - 34

SP - 1943

EP - 1944

JO - Electronics Letters

JF - Electronics Letters

IS - 20

ER -

Broad area semiconductor lasers with improved near and far fields using enhanced current spreading

Abstract

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