Broadband 5Gb/s optical RAM cell over the C-band

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Abstract

A broadband optical RAM cell comprising a monolithic InP Flip-Flop and a Random Access Gate is experimentally presented with at least 5 Gb/s error-free operation and less than 4.5dB power penalty across the whole C-band.

Original languageEnglish
Article numberSTu1G.4
JournalOptics InfoBase Conference Papers
Publication statusPublished - 2021
EventCLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, United States
Duration: 9 May 202114 May 2021

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