BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities

G. Groeseneken; J. Franco; M. Cho; B. Kaczer; M. Toledano-Luque; Ph Roussel; T. Kauerauf; A. Alian; J. Mitard; H. Arimura; D. Lin; N. Waldron; S. Sioncke; L. Witters; H. Mertens; L. Ragnarsson; M. Heyns; N. Collaert; A. Thean; A. Steegen

doi:10.1109/IEDM.2014.7047168

BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities

G. Groeseneken
, J. Franco
, M. Cho
, B. Kaczer
, M. Toledano-Luque
, Ph Roussel
, T. Kauerauf
, A. Alian
, J. Mitard
, H. Arimura
, D. Lin
, N. Waldron
, S. Sioncke
, L. Witters
, H. Mertens
, L. Ragnarsson
, M. Heyns
, N. Collaert
, A. Thean
, A. Steegen

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

Our present understanding of BTI in Si and (Si)Ge based sub 1-nanometer EOT MOSFET devices is reviewed and extended to benchmark other Beyond-Si based devices. We discuss the evolution of NBTI for Si-based pMOS devices as a possible showstopper for further scaling below 1nm EOT. Then we present the BTI reliability framework which was developed for SiGe based MOSFET devices, showing strongly improved BTI reliability, explained by carrier-defect decoupling. Also the important issue of increasing stochastic behavior and time dependent variability is discussed. Based on the presented framework developed for SiGe stacks we benchmark alternative Beyond-Si gate stacks using a metric for carrier-defect decoupling, allowing to screen stacks for acceptable reliability.

Original language	English
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	34.4.1-34.4.4
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7047168
Publication status	Published - 20 Feb 2015
Externally published	Yes
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: 15 Dec 2014 → 17 Dec 2014

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Number	February
Volume	2015-February
ISSN (Print)	0163-1918

Conference

Conference	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	15/12/14 → 17/12/14

Access to Document

10.1109/IEDM.2014.7047168

Cite this

Groeseneken, G., Franco, J., Cho, M., Kaczer, B., Toledano-Luque, M., Roussel, P., Kauerauf, T., Alian, A., Mitard, J., Arimura, H., Lin, D., Waldron, N., Sioncke, S., Witters, L., Mertens, H., Ragnarsson, L., Heyns, M., Collaert, N., Thean, A., & Steegen, A. (2015). BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 34.4.1-34.4.4). Article 7047168 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047168

Groeseneken, G. ; Franco, J. ; Cho, M. et al. / BTI reliability of advanced gate stacks for Beyond-Silicon devices : Challenges and opportunities. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 34.4.1-34.4.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).

@inbook{288e4c5eadb544229abc920d7f8ef0da,

title = "BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities",

abstract = "Our present understanding of BTI in Si and (Si)Ge based sub 1-nanometer EOT MOSFET devices is reviewed and extended to benchmark other Beyond-Si based devices. We discuss the evolution of NBTI for Si-based pMOS devices as a possible showstopper for further scaling below 1nm EOT. Then we present the BTI reliability framework which was developed for SiGe based MOSFET devices, showing strongly improved BTI reliability, explained by carrier-defect decoupling. Also the important issue of increasing stochastic behavior and time dependent variability is discussed. Based on the presented framework developed for SiGe stacks we benchmark alternative Beyond-Si gate stacks using a metric for carrier-defect decoupling, allowing to screen stacks for acceptable reliability.",

author = "G. Groeseneken and J. Franco and M. Cho and B. Kaczer and M. Toledano-Luque and Ph Roussel and T. Kauerauf and A. Alian and J. Mitard and H. Arimura and D. Lin and N. Waldron and S. Sioncke and L. Witters and H. Mertens and L. Ragnarsson and M. Heyns and N. Collaert and A. Thean and A. Steegen",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 60th IEEE International Electron Devices Meeting, IEDM 2014 ; Conference date: 15-12-2014 Through 17-12-2014",

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doi = "10.1109/IEDM.2014.7047168",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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pages = "34.4.1--34.4.4",

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Groeseneken, G, Franco, J, Cho, M, Kaczer, B, Toledano-Luque, M, Roussel, P, Kauerauf, T, Alian, A, Mitard, J, Arimura, H, Lin, D, Waldron, N, Sioncke, S, Witters, L, Mertens, H, Ragnarsson, L, Heyns, M, Collaert, N, Thean, A & Steegen, A 2015, BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7047168, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 34.4.1-34.4.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 15/12/14. https://doi.org/10.1109/IEDM.2014.7047168

BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities. / Groeseneken, G.; Franco, J.; Cho, M. et al.
2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 34.4.1-34.4.4 7047168 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - BTI reliability of advanced gate stacks for Beyond-Silicon devices

T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014

AU - Groeseneken, G.

AU - Franco, J.

AU - Cho, M.

AU - Kaczer, B.

AU - Toledano-Luque, M.

AU - Roussel, Ph

AU - Kauerauf, T.

AU - Alian, A.

AU - Mitard, J.

AU - Arimura, H.

AU - Lin, D.

AU - Waldron, N.

AU - Sioncke, S.

AU - Witters, L.

AU - Mertens, H.

AU - Ragnarsson, L.

AU - Heyns, M.

AU - Collaert, N.

AU - Thean, A.

AU - Steegen, A.

PY - 2015/2/20

Y1 - 2015/2/20

N2 - Our present understanding of BTI in Si and (Si)Ge based sub 1-nanometer EOT MOSFET devices is reviewed and extended to benchmark other Beyond-Si based devices. We discuss the evolution of NBTI for Si-based pMOS devices as a possible showstopper for further scaling below 1nm EOT. Then we present the BTI reliability framework which was developed for SiGe based MOSFET devices, showing strongly improved BTI reliability, explained by carrier-defect decoupling. Also the important issue of increasing stochastic behavior and time dependent variability is discussed. Based on the presented framework developed for SiGe stacks we benchmark alternative Beyond-Si gate stacks using a metric for carrier-defect decoupling, allowing to screen stacks for acceptable reliability.

AB - Our present understanding of BTI in Si and (Si)Ge based sub 1-nanometer EOT MOSFET devices is reviewed and extended to benchmark other Beyond-Si based devices. We discuss the evolution of NBTI for Si-based pMOS devices as a possible showstopper for further scaling below 1nm EOT. Then we present the BTI reliability framework which was developed for SiGe based MOSFET devices, showing strongly improved BTI reliability, explained by carrier-defect decoupling. Also the important issue of increasing stochastic behavior and time dependent variability is discussed. Based on the presented framework developed for SiGe stacks we benchmark alternative Beyond-Si gate stacks using a metric for carrier-defect decoupling, allowing to screen stacks for acceptable reliability.

UR - https://www.scopus.com/pages/publications/84938265711

U2 - 10.1109/IEDM.2014.7047168

DO - 10.1109/IEDM.2014.7047168

M3 - Chapter

AN - SCOPUS:84938265711

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 34.4.1-34.4.4

BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 15 December 2014 through 17 December 2014

ER -

Groeseneken G, Franco J, Cho M, Kaczer B, Toledano-Luque M, Roussel P et al. BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 34.4.1-34.4.4. 7047168. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7047168

BTI reliability of advanced gate stacks for Beyond-Silicon devices: Challenges and opportunities

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