Bumpless interconnects formed with nanowire ACF for 3D applications

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Abstract

Nanowire ACF is fabricated by template synthesis method based on electrochemical deposition. Due to the high aspect ratio of length to diameter (50:1), the nanowires can act as compliant conductors to electrically connect the bumpless dies with a small bonding force. In this work, an interconnection resistance of 90 mΩ per 40 × 40 μm2 pad is measured for the Cu NW-ACF bonding between two Au bumpless dies. An increasing leakage current up to 10-6 A in x-y plane is observed with the elevated voltage till 20 V for a pitch size of 80 μm. A comparison study of NW-ACF to conventional particle based ACF is carried out. The bonding mechanisms of the NW-ACF bonding to bumped and bumpless dies and its difference to particle ACF bonding is revealed by bonding interface analysis.

Original languageEnglish
Title of host publication2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479984725
DOIs
Publication statusPublished - 2014
EventInternational 3D Systems Integration Conference, 3DIC 2014 - Kinsdale, Ireland
Duration: 1 Dec 20143 Dec 2014

Publication series

Name2014 International 3D Systems Integration Conference, 3DIC 2014 - Proceedings

Conference

ConferenceInternational 3D Systems Integration Conference, 3DIC 2014
Country/TerritoryIreland
CityKinsdale
Period1/12/143/12/14

Keywords

  • Bonding interface analysis
  • Bumpless interconnect
  • Flip-chip bonding
  • Interconnectio resistance
  • Leakage current
  • Nanowire ACF

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