Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

H. Yang; N. Ye; R. Phelan; J. O'Carroll; B. Kelly; W. Han; X. Wang; N. Nudds; N. MacSuibhne; F. Gunning; P. O'Brien; F. H. Peters; B. Corbett

doi:10.1049/el.2012.4335

Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

H. Yang
, N. Ye
, R. Phelan
, J. O'Carroll
, B. Kelly
, W. Han
, X. Wang
, N. Nudds
, N. MacSuibhne
, F. Gunning
, P. O'Brien
, F. H. Peters
, B. Corbett

Research output: Contribution to journal › Article › peer-review

Abstract

An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar highspeed performance at 1550nm.

Original language	English
Pages (from-to)	293-295
Number of pages	3
Journal	Electronics Letters
Volume	49
Issue number	4
DOIs	https://doi.org/10.1049/el.2012.4335
Publication status	Published - 14 Feb 2013

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10.1049/el.2012.4335

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title = "Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems",

abstract = "An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar highspeed performance at 1550nm.",

author = "H. Yang and N. Ye and R. Phelan and J. O'Carroll and B. Kelly and W. Han and X. Wang and N. Nudds and N. MacSuibhne and F. Gunning and P. O'Brien and Peters, \{F. H.\} and B. Corbett",

year = "2013",

month = feb,

day = "14",

doi = "10.1049/el.2012.4335",

language = "English",

volume = "49",

pages = "293--295",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "4",

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TY - JOUR

T1 - Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

AU - Yang, H.

AU - Ye, N.

AU - Phelan, R.

AU - O'Carroll, J.

AU - Kelly, B.

AU - Han, W.

AU - Wang, X.

AU - Nudds, N.

AU - MacSuibhne, N.

AU - Gunning, F.

AU - O'Brien, P.

AU - Peters, F. H.

AU - Corbett, B.

PY - 2013/2/14

Y1 - 2013/2/14

N2 - An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar highspeed performance at 1550nm.

AB - An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar highspeed performance at 1550nm.

UR - https://www.scopus.com/pages/publications/84877785727

U2 - 10.1049/el.2012.4335

DO - 10.1049/el.2012.4335

M3 - Article

AN - SCOPUS:84877785727

SN - 0013-5194

VL - 49

SP - 293

EP - 295

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

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