Calibration of numerical simulation tools for fine geometry SOI CMOS

The calibration of implantation and diffusion models with what is fabricated is crucial for device and process designs. The need for a replacement of the conventional implant species in small geometry CMOS for source/drain implants is demonstrated. Arsenic and BF₂ are two such alternatives. This paper examines the establishment of an accurate simulation environment for arsenic implants for an SOI CMOS process. The simulation environment has been developed for a number of different process variations, such as furnace and rapid thermal annealing. Both bulk and SOI wafers were used in the study. A corresponding environment for BF₂ was not achieved at this time.