@inproceedings{f34730e8e7f744c1a0837551d8918b2b,
title = "Can metal/Al2O3/In0.53Ga 0.47As/InP MOSCAP properties translate to metal/Al2O 3/In0.53Ga0.47As/InP MOSFET characteristics?",
abstract = "In this paper we present the electrical characteristics of Metal/Al 2O3/In0.53Ga0.47As/InP MOS capacitor (MOSCAP) structures formed using a relatively straightforward capacitor process flow and for MOSCAPs which experience the full process flow of an In 0.53Ga0.47As n channel MOSFET. From analysis of the capacitance-voltage response over a range of ac signal frequencies fixed oxide charge densities and interface state concentrations are determined for the MOSCAP structures and the impact of forming gas annealing on oxide and interface state densities is presented. The MOSCAP results are compared to the properties of fully processed metal/Al2O3/In0.53Ga 0.47As/InP n channel MOSFETs, and the results indicate that the findings from the MOSCAPS do translate to the measured InGaAs MOSFET characteristics.",
author = "K. Cherkaoui and V. Djara and {\'E} O'Connor and J. Lin and Negara, \{M. A.\} and Povey, \{I. M.\} and S. Monaghan and Hurley, \{P. K.\}",
year = "2012",
doi = "10.1149/1.3700874",
language = "English",
isbn = "9781566779555",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "79--88",
booktitle = "Dielectrics for Nanosystems 5",
address = "United States",
edition = "3",
note = "5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",
}