Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions

Scott Monaghan; Éamon O’Connor; Rafael Rios; Fahmida Ferdousi; Liam Floyd; Eimear Ryan; Karim Cherkaoui; Ian M Povey; Kelin J Kuhn; Paul K Hurley

Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions

Scott Monaghan
, Éamon O’Connor
, Rafael Rios
, Fahmida Ferdousi
, Liam Floyd
, Eimear Ryan
, Karim Cherkaoui
, Ian M Povey
, Kelin J Kuhn
, Paul K Hurley

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	IEEE Transactions on Electron Devices
Publication status	Published - 2014

Cite this

@article{d1a1e1b32163439c97fb8edb296b40a3,

title = "Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions",

author = "Scott Monaghan and {\'E}amon O{\textquoteright}Connor and Rafael Rios and Fahmida Ferdousi and Liam Floyd and Eimear Ryan and Karim Cherkaoui and Povey, \{Ian M\} and Kuhn, \{Kelin J\} and Hurley, \{Paul K\}",

year = "2014",

language = "Undefined/Unknown",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Capacitance and conductance for an MOS system in inversion, with oxide capacitance and minority carrier lifetime extractions

AU - Monaghan, Scott

AU - O’Connor, Éamon

AU - Rios, Rafael

AU - Ferdousi, Fahmida

AU - Floyd, Liam

AU - Ryan, Eimear

AU - Cherkaoui, Karim

AU - Povey, Ian M

AU - Kuhn, Kelin J

AU - Hurley, Paul K

PY - 2014

Y1 - 2014

M3 - Article

SN - 0018-9383

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -