Capacitance-voltage and interface defect density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric

É O’Connor; V Djara; S Monaghan; PK Hurley; K Cherkaoui

Capacitance-voltage and interface defect density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric

É O’Connor
, V Djara
, S Monaghan
, PK Hurley
, K Cherkaoui

Tyndall MicroNano Systems

Research output: Contribution to journal › Meeting abstract › peer-review

Original language	English
Journal	ECS Meeting Abstracts
Publication status	Published - 2008

Cite this

@article{979f22f553274d37a1cc66c5420b015c,

title = "Capacitance-voltage and interface defect density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric",

author = "{\'E} O{\textquoteright}Connor and V Djara and S Monaghan and PK Hurley and K Cherkaoui",

year = "2008",

language = "English",

journal = "ECS Meeting Abstracts",

issn = "1091-8213",

}