Capacitance-voltage and interface defect density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric

Ailbe O'Manachain

doi:10.1149/1.3569934

Capacitance-voltage and interface defect density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric

Ailbe O'Manachain

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	ECS Transactions
DOIs	https://doi.org/10.1149/1.3569934
Publication status	Published - 2009

Access to Document

10.1149/1.3569934

Cite this

@article{97ce845c8ecc467192997887998cb3f9,

title = "Capacitance-voltage and interface defect density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric",

author = "Ailbe O'Manachain",

year = "2009",

doi = "10.1149/1.3569934",

language = "Undefined/Unknown",

journal = "ECS Transactions",

issn = "1938-6737",

publisher = "Institute of Physics",

}