Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric

É O'Connor; V. Djara; S. Monaghan; P. K. Hurley; K. Cherkaoui

doi:10.1149/1.3569934

Capacitance-voltage and interface defect density characteristics of GaAs and In_0.53Ga_0.47As MOS capacitors incorporating a PECVD Si₃N₄ dielectric

É O'Connor
, V. Djara
, S. Monaghan
, P. K. Hurley
, K. Cherkaoui

University College Cork

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Si₃N₄ films were simultaneously deposited on GaAs and In_0.53Ga_0.47As in a PECVD reactor to explore NH ₃ plasma exposure of both substrates without any subsequent ambient exposure prior to dielectric formation. For both GaAs and In _0.53Ga_0.47As MOS devices the interface defect density near midgap was significantly reduced due to NH₃ plasma and post-metallisation forming gas annealing (FGA). A 10 second NH₃ plasma combined with FGA resulted in a 50% reduction in the peak D_it for the near-midgap defect on GaAs, and a 66% reduction in D_it for the midgap defect on In_0.53Ga_0.47As. This comparable defect-response behaviour suggests that the defect observed at midgap for In_0.53Ga_0.47As is very similar in nature to the near-midgap defect in GaAs, and is potentially the same defect. This would indicate that the influence of Ga or As-related defect states are predominant compared to In-related defect states for the midgap defect response typically observed for In_0.53Ga_0.47As devices.

Original language	English
Title of host publication	Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
Pages	415-430
Number of pages	16
Edition	3
DOIs	https://doi.org/10.1149/1.3569934
Publication status	Published - 2011
Event	Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting - Montreal, QC, Canada Duration: 2 May 2011 → 4 May 2011

Publication series

Name	ECS Transactions
Number	3
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting
Country/Territory	Canada
City	Montreal, QC
Period	2/05/11 → 4/05/11

Access to Document

10.1149/1.3569934

Cite this

O'Connor, É., Djara, V., Monaghan, S., Hurley, P. K., & Cherkaoui, K. (2011). Capacitance-voltage and interface defect density characteristics of GaAs and In_0.53Ga_0.47As MOS capacitors incorporating a PECVD Si₃N₄ dielectric. In Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3 (3 ed., pp. 415-430). (ECS Transactions; Vol. 35, No. 3). https://doi.org/10.1149/1.3569934

@inproceedings{27942dc2c760489f8a8c72b9ea1e53db,

title = "Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric",

abstract = "Si3N4 films were simultaneously deposited on GaAs and In0.53Ga0.47As in a PECVD reactor to explore NH 3 plasma exposure of both substrates without any subsequent ambient exposure prior to dielectric formation. For both GaAs and In 0.53Ga0.47As MOS devices the interface defect density near midgap was significantly reduced due to NH3 plasma and post-metallisation forming gas annealing (FGA). A 10 second NH3 plasma combined with FGA resulted in a 50\% reduction in the peak Dit for the near-midgap defect on GaAs, and a 66\% reduction in Dit for the midgap defect on In0.53Ga0.47As. This comparable defect-response behaviour suggests that the defect observed at midgap for In0.53Ga0.47As is very similar in nature to the near-midgap defect in GaAs, and is potentially the same defect. This would indicate that the influence of Ga or As-related defect states are predominant compared to In-related defect states for the midgap defect response typically observed for In0.53Ga0.47As devices.",

author = "{\'E} O'Connor and V. Djara and S. Monaghan and Hurley, \{P. K.\} and K. Cherkaoui",

year = "2011",

doi = "10.1149/1.3569934",

language = "English",

isbn = "9781566778640",

series = "ECS Transactions",

number = "3",

pages = "415--430",

booktitle = "Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3",

edition = "3",

note = "Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting ; Conference date: 02-05-2011 Through 04-05-2011",

}

O'Connor, É, Djara, V, Monaghan, S, Hurley, PK & Cherkaoui, K 2011, Capacitance-voltage and interface defect density characteristics of GaAs and In_0.53Ga_0.47As MOS capacitors incorporating a PECVD Si₃N₄ dielectric. in Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3. 3 edn, ECS Transactions, no. 3, vol. 35, pp. 415-430, Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting, Montreal, QC, Canada, 2/05/11. https://doi.org/10.1149/1.3569934

Capacitance-voltage and interface defect density characteristics of GaAs and In_0.53Ga_0.47As MOS capacitors incorporating a PECVD Si₃N₄ dielectric. / O'Connor, É; Djara, V.; Monaghan, S. et al.
Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3. 3. ed. 2011. p. 415-430 (ECS Transactions; Vol. 35, No. 3).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric

AU - O'Connor, É

AU - Djara, V.

AU - Monaghan, S.

AU - Hurley, P. K.

AU - Cherkaoui, K.

PY - 2011

Y1 - 2011

N2 - Si3N4 films were simultaneously deposited on GaAs and In0.53Ga0.47As in a PECVD reactor to explore NH 3 plasma exposure of both substrates without any subsequent ambient exposure prior to dielectric formation. For both GaAs and In 0.53Ga0.47As MOS devices the interface defect density near midgap was significantly reduced due to NH3 plasma and post-metallisation forming gas annealing (FGA). A 10 second NH3 plasma combined with FGA resulted in a 50% reduction in the peak Dit for the near-midgap defect on GaAs, and a 66% reduction in Dit for the midgap defect on In0.53Ga0.47As. This comparable defect-response behaviour suggests that the defect observed at midgap for In0.53Ga0.47As is very similar in nature to the near-midgap defect in GaAs, and is potentially the same defect. This would indicate that the influence of Ga or As-related defect states are predominant compared to In-related defect states for the midgap defect response typically observed for In0.53Ga0.47As devices.

AB - Si3N4 films were simultaneously deposited on GaAs and In0.53Ga0.47As in a PECVD reactor to explore NH 3 plasma exposure of both substrates without any subsequent ambient exposure prior to dielectric formation. For both GaAs and In 0.53Ga0.47As MOS devices the interface defect density near midgap was significantly reduced due to NH3 plasma and post-metallisation forming gas annealing (FGA). A 10 second NH3 plasma combined with FGA resulted in a 50% reduction in the peak Dit for the near-midgap defect on GaAs, and a 66% reduction in Dit for the midgap defect on In0.53Ga0.47As. This comparable defect-response behaviour suggests that the defect observed at midgap for In0.53Ga0.47As is very similar in nature to the near-midgap defect in GaAs, and is potentially the same defect. This would indicate that the influence of Ga or As-related defect states are predominant compared to In-related defect states for the midgap defect response typically observed for In0.53Ga0.47As devices.

UR - https://www.scopus.com/pages/publications/79960765702

U2 - 10.1149/1.3569934

DO - 10.1149/1.3569934

M3 - Conference proceeding

AN - SCOPUS:79960765702

SN - 9781566778640

T3 - ECS Transactions

SP - 415

EP - 430

BT - Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

T2 - Graphene Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications - 3 - 219th ECS Meeting

Y2 - 2 May 2011 through 4 May 2011

ER -

O'Connor É, Djara V, Monaghan S, Hurley PK , Cherkaoui K. Capacitance-voltage and interface defect density characteristics of GaAs and In_0.53Ga_0.47As MOS capacitors incorporating a PECVD Si₃N₄ dielectric. In Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3. 3 ed. 2011. p. 415-430. (ECS Transactions; 3). doi: 10.1149/1.3569934