Capacitance-voltage and interface state density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric

Eamon O'Connor; Vladimir Djara; Scott Monaghan; Paul Hurley; Karim Cherkaoui

Capacitance-voltage and interface state density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric

Eamon O'Connor
, Vladimir Djara
, Scott Monaghan
, Paul Hurley
, Karim Cherkaoui

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Electrochemical Society Transactions 219
Publication status	Published - 2011

Cite this

@article{bea307684a824704b38dd2182bb7d749,

title = "Capacitance-voltage and interface state density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric",

author = "Eamon O'Connor and Vladimir Djara and Scott Monaghan and Paul Hurley and Karim Cherkaoui",

year = "2011",

language = "Undefined/Unknown",

journal = "Electrochemical Society Transactions 219",

}

TY - JOUR

T1 - Capacitance-voltage and interface state density characteristics of GaAs and In0. 53Ga0. 47As MOS capacitors incorporating a PECVD Si3N4 dielectric

AU - O'Connor, Eamon

AU - Djara, Vladimir

AU - Monaghan, Scott

AU - Hurley, Paul

AU - Cherkaoui, Karim

PY - 2011

Y1 - 2011

M3 - Article

JO - Electrochemical Society Transactions 219

JF - Electrochemical Society Transactions 219

ER -