Capacitance-Voltage Characterization of LPCVD-Silicon Oxynitride Films

A. Szekeres; S. Alexandrova; M. Modreanu

doi:10.1002/1521-396X(200110)187:2<493::AID-PSSA493>3.0.CO;2-6

Capacitance-Voltage Characterization of LPCVD-Silicon Oxynitride Films

A. Szekeres
, S. Alexandrova
, M. Modreanu

Research output: Contribution to journal › Article › peer-review

Abstract

LPCVD-silicon oxynitride films with different compositions were deposited on n-Si(111) substrates by reacting dichlorosilane (Si₂H₂Cl₂) with nitrous oxide (N₂O) and ammonia (NH₃) at a temperature of 860°C varying the gas flow rate ratio of N₂D and NH₃. The electrical properties of the SiO_xN_y films were studied by analysis of the 1 MHz capacitance-voltage characteristics of the metal-SiO_xN_y-silicon capacitors. It has been found that with increasing amount of N₂O in the deposition ambient the concentration of the dielectric charges in the SiO_xN_y/Si structures goes through a minimum, while the interface trap density gradually decreases. The nature of the defects is discussed.

Original language	English
Pages (from-to)	493-498
Number of pages	6
Journal	Physica Status Solidi (A) Applied Research
Volume	187
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200110)187:2<493::AID-PSSA493>3.0.CO;2-6
Publication status	Published - Oct 2001
Externally published	Yes

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10.1002/1521-396X(200110)187:2<493::AID-PSSA493>3.0.CO;2-6

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title = "Capacitance-Voltage Characterization of LPCVD-Silicon Oxynitride Films",

abstract = "LPCVD-silicon oxynitride films with different compositions were deposited on n-Si(111) substrates by reacting dichlorosilane (Si2H2Cl2) with nitrous oxide (N2O) and ammonia (NH3) at a temperature of 860°C varying the gas flow rate ratio of N2D and NH3. The electrical properties of the SiOxNy films were studied by analysis of the 1 MHz capacitance-voltage characteristics of the metal-SiOxNy-silicon capacitors. It has been found that with increasing amount of N2O in the deposition ambient the concentration of the dielectric charges in the SiOxNy/Si structures goes through a minimum, while the interface trap density gradually decreases. The nature of the defects is discussed.",

author = "A. Szekeres and S. Alexandrova and M. Modreanu",

year = "2001",

month = oct,

doi = "10.1002/1521-396X(200110)187:2<493::AID-PSSA493>3.0.CO;2-6",

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pages = "493--498",

journal = "Physica Status Solidi (A) Applied Research",

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T1 - Capacitance-Voltage Characterization of LPCVD-Silicon Oxynitride Films

AU - Szekeres, A.

AU - Alexandrova, S.

AU - Modreanu, M.

PY - 2001/10

Y1 - 2001/10

N2 - LPCVD-silicon oxynitride films with different compositions were deposited on n-Si(111) substrates by reacting dichlorosilane (Si2H2Cl2) with nitrous oxide (N2O) and ammonia (NH3) at a temperature of 860°C varying the gas flow rate ratio of N2D and NH3. The electrical properties of the SiOxNy films were studied by analysis of the 1 MHz capacitance-voltage characteristics of the metal-SiOxNy-silicon capacitors. It has been found that with increasing amount of N2O in the deposition ambient the concentration of the dielectric charges in the SiOxNy/Si structures goes through a minimum, while the interface trap density gradually decreases. The nature of the defects is discussed.

AB - LPCVD-silicon oxynitride films with different compositions were deposited on n-Si(111) substrates by reacting dichlorosilane (Si2H2Cl2) with nitrous oxide (N2O) and ammonia (NH3) at a temperature of 860°C varying the gas flow rate ratio of N2D and NH3. The electrical properties of the SiOxNy films were studied by analysis of the 1 MHz capacitance-voltage characteristics of the metal-SiOxNy-silicon capacitors. It has been found that with increasing amount of N2O in the deposition ambient the concentration of the dielectric charges in the SiOxNy/Si structures goes through a minimum, while the interface trap density gradually decreases. The nature of the defects is discussed.

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DO - 10.1002/1521-396X(200110)187:2<493::AID-PSSA493>3.0.CO;2-6

M3 - Article

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

ER -

Capacitance-Voltage Characterization of LPCVD-Silicon Oxynitride Films

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