@inbook{5fc6d6c6a0ed404fa1aaf1ceb116d07b,
title = "Capacitance-Voltage measurement of SiO2/GeOxNy gate stack on surface passivated germanium",
abstract = "Germanium (Ge) based MOS transistors is possible alternative to silicon based MOS transistors due to high mobility of carriers in Ge. Extensive research is going on for fabrication of high mobility MOS devices worldwide. Here, we have studied the c-v characteristics of Ge based surface passivated MOS structure such as dielectric constant of gate stack, effective oxide charges, density of interface charges at semiconductor oxide interface etc. The interface trap density extracted from the C-V/G-V measurement showed the lowest interface trap density of 7.82×1011cm2eV-1. The minimum leakage current density for SiO2/GexONy gate dielectric stack is 1.35×10-7Acm-2 at gate bias of 1V.",
keywords = "Dit, Germanium, Passivation, SiO2, Sputtering",
author = "Khairnar, \{Anil G.\} and Patil, \{Vilas S.\} and Mahajan, \{Ashok M.\}",
note = "Publisher Copyright: {\textcopyright} Springer International Publishing Switzerland 2014.; 17th International Workshop on the Physics of Semiconductor Devices, IWPSD 2013 ; Conference date: 10-12-2013 Through 14-12-2013",
year = "2014",
doi = "10.1007/978-3-319-03002-9\_2",
language = "English",
isbn = "9783319030012",
series = "Environmental Science and Engineering",
publisher = "Springer Science and Business Media Deutschland GmbH",
pages = "5--8",
editor = "V.K. Jain and Abhishek Verma",
booktitle = "Physics of Semiconductor Devices - 17th International Workshop on the Physics of Semiconductor Devices, 2013",
address = "Germany",
}