Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

C. Ortolland; S. Mathew; R. Duffy; K. Saino; C. S. Kim; S. Mertens; N. Horiguchi; C. Vrancken; T. Chiarella; C. Kerner; P. P. Absil; A. Lauwers; S. Biesemans; T. Hoffmann

doi:10.1109/ULIS.2009.4897559

Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

C. Ortolland
, S. Mathew
, R. Duffy
, K. Saino
, C. S. Kim
, S. Mertens
, N. Horiguchi
, C. Vrancken
, T. Chiarella
, C. Kerner
, P. P. Absil
, A. Lauwers
, S. Biesemans
, T. Hoffmann

Interuniversitair Micro-Elektronica Centrum

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

Carbon-based thermal stabilization techniques have been used for improving performance of CMOS periphery devices in memory application. Current drives are shown to improve by 15 and 30% for N & PMOS, respectively, external resistance of P+ improves by 15 X and N+ by 30%, and RO delay reduction of 25% compared to the conventional contact scheme.

Original language	English
Title of host publication	Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Publisher	IEEE Computer Society
Pages	147-150
Number of pages	4
ISBN (Print)	9781424437054
DOIs	https://doi.org/10.1109/ULIS.2009.4897559
Publication status	Published - 2009
Externally published	Yes
Event	10th International Conference on ULtimate Integration of Silicon, ULIS 2009 - Aachen, Germany Duration: 18 Mar 2009 → 20 Mar 2009

Publication series

Name	Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Conference

Conference	10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Country/Territory	Germany
City	Aachen
Period	18/03/09 → 20/03/09

Access to Document

10.1109/ULIS.2009.4897559

Cite this

Ortolland, C., Mathew, S., Duffy, R., Saino, K., Kim, C. S., Mertens, S., Horiguchi, N., Vrancken, C., Chiarella, T., Kerner, C., Absil, P. P., Lauwers, A., Biesemans, S., & Hoffmann, T. (2009). Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp. 147-150). Article 4897559 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009). IEEE Computer Society. https://doi.org/10.1109/ULIS.2009.4897559

Ortolland, C. ; Mathew, S. ; Duffy, R. et al. / Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications. Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. IEEE Computer Society, 2009. pp. 147-150 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009).

@inproceedings{7b263da12d7b48838ec3dca4addf63b1,

title = "Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications",

abstract = "Carbon-based thermal stabilization techniques have been used for improving performance of CMOS periphery devices in memory application. Current drives are shown to improve by 15 and 30\% for N \& PMOS, respectively, external resistance of P+ improves by 15 X and N+ by 30\%, and RO delay reduction of 25\% compared to the conventional contact scheme.",

author = "C. Ortolland and S. Mathew and R. Duffy and K. Saino and Kim, \{C. S.\} and S. Mertens and N. Horiguchi and C. Vrancken and T. Chiarella and C. Kerner and Absil, \{P. P.\} and A. Lauwers and S. Biesemans and T. Hoffmann",

year = "2009",

doi = "10.1109/ULIS.2009.4897559",

language = "English",

isbn = "9781424437054",

series = "Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009",

publisher = "IEEE Computer Society",

pages = "147--150",

booktitle = "Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009",

address = "United States",

note = "10th International Conference on ULtimate Integration of Silicon, ULIS 2009 ; Conference date: 18-03-2009 Through 20-03-2009",

}

Ortolland, C, Mathew, S, Duffy, R, Saino, K, Kim, CS, Mertens, S, Horiguchi, N, Vrancken, C, Chiarella, T, Kerner, C, Absil, PP, Lauwers, A, Biesemans, S & Hoffmann, T 2009, Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications. in Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009., 4897559, Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009, IEEE Computer Society, pp. 147-150, 10th International Conference on ULtimate Integration of Silicon, ULIS 2009, Aachen, Germany, 18/03/09. https://doi.org/10.1109/ULIS.2009.4897559

Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications. / Ortolland, C.; Mathew, S.; Duffy, R. et al.
Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. IEEE Computer Society, 2009. p. 147-150 4897559 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

AU - Ortolland, C.

AU - Mathew, S.

AU - Duffy, R.

AU - Saino, K.

AU - Kim, C. S.

AU - Mertens, S.

AU - Horiguchi, N.

AU - Vrancken, C.

AU - Chiarella, T.

AU - Kerner, C.

AU - Absil, P. P.

AU - Lauwers, A.

AU - Biesemans, S.

AU - Hoffmann, T.

PY - 2009

Y1 - 2009

N2 - Carbon-based thermal stabilization techniques have been used for improving performance of CMOS periphery devices in memory application. Current drives are shown to improve by 15 and 30% for N & PMOS, respectively, external resistance of P+ improves by 15 X and N+ by 30%, and RO delay reduction of 25% compared to the conventional contact scheme.

AB - Carbon-based thermal stabilization techniques have been used for improving performance of CMOS periphery devices in memory application. Current drives are shown to improve by 15 and 30% for N & PMOS, respectively, external resistance of P+ improves by 15 X and N+ by 30%, and RO delay reduction of 25% compared to the conventional contact scheme.

UR - https://www.scopus.com/pages/publications/67650698584

U2 - 10.1109/ULIS.2009.4897559

DO - 10.1109/ULIS.2009.4897559

M3 - Conference proceeding

AN - SCOPUS:67650698584

SN - 9781424437054

T3 - Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

SP - 147

EP - 150

BT - Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

PB - IEEE Computer Society

T2 - 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Y2 - 18 March 2009 through 20 March 2009

ER -

Ortolland C, Mathew S, Duffy R, Saino K, Kim CS, Mertens S et al. Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. IEEE Computer Society. 2009. p. 147-150. 4897559. (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009). doi: 10.1109/ULIS.2009.4897559

Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

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