Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature

C. Jordan; J. F. Donegan; J. Hegarty; B. J. Roycroft; S. Taniguchi; T. Hino; E. Kato; N. Noguchi; A. Ishibashi

doi:10.1063/1.123344

Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature

C. Jordan
, J. F. Donegan
, J. Hegarty
, B. J. Roycroft
, S. Taniguchi
, T. Hino
, E. Kato
, N. Noguchi
, A. Ishibashi

Research output: Contribution to journal › Article › peer-review

Abstract

The carrier recombination dynamics in Zn_1-xCd_xSe/ZnSSe/ZnMgSSe quantum wells (QW) were studied through time-resolved photoluminescence measurements performed at a room temperature as a function of carrier density. The carrier density in the QWs was varied between 5×10⁹ and 5×10¹² W/cm^-2. A simple rate equation model determined the radiative and the non-radiative recombination coefficients to be 8×10^-4 cm²/s and a Shockley-Read-Hall of 7.3×10⁷/s in the best material. The analysis suggested that a bimolecular recombination model best describe the radiative recombination in II-VI QWs.

Original language	English
Pages (from-to)	3359-3361
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	22
DOIs	https://doi.org/10.1063/1.123344
Publication status	Published - 31 May 1999
Externally published	Yes

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title = "Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature",

abstract = "The carrier recombination dynamics in Zn1-xCdxSe/ZnSSe/ZnMgSSe quantum wells (QW) were studied through time-resolved photoluminescence measurements performed at a room temperature as a function of carrier density. The carrier density in the QWs was varied between 5×109 and 5×1012 W/cm-2. A simple rate equation model determined the radiative and the non-radiative recombination coefficients to be 8×10-4 cm2/s and a Shockley-Read-Hall of 7.3×107/s in the best material. The analysis suggested that a bimolecular recombination model best describe the radiative recombination in II-VI QWs.",

author = "C. Jordan and Donegan, \{J. F.\} and J. Hegarty and Roycroft, \{B. J.\} and S. Taniguchi and T. Hino and E. Kato and N. Noguchi and A. Ishibashi",

year = "1999",

month = may,

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doi = "10.1063/1.123344",

language = "English",

volume = "74",

pages = "3359--3361",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature

AU - Jordan, C.

AU - Donegan, J. F.

AU - Hegarty, J.

AU - Roycroft, B. J.

AU - Taniguchi, S.

AU - Hino, T.

AU - Kato, E.

AU - Noguchi, N.

AU - Ishibashi, A.

PY - 1999/5/31

Y1 - 1999/5/31

N2 - The carrier recombination dynamics in Zn1-xCdxSe/ZnSSe/ZnMgSSe quantum wells (QW) were studied through time-resolved photoluminescence measurements performed at a room temperature as a function of carrier density. The carrier density in the QWs was varied between 5×109 and 5×1012 W/cm-2. A simple rate equation model determined the radiative and the non-radiative recombination coefficients to be 8×10-4 cm2/s and a Shockley-Read-Hall of 7.3×107/s in the best material. The analysis suggested that a bimolecular recombination model best describe the radiative recombination in II-VI QWs.

AB - The carrier recombination dynamics in Zn1-xCdxSe/ZnSSe/ZnMgSSe quantum wells (QW) were studied through time-resolved photoluminescence measurements performed at a room temperature as a function of carrier density. The carrier density in the QWs was varied between 5×109 and 5×1012 W/cm-2. A simple rate equation model determined the radiative and the non-radiative recombination coefficients to be 8×10-4 cm2/s and a Shockley-Read-Hall of 7.3×107/s in the best material. The analysis suggested that a bimolecular recombination model best describe the radiative recombination in II-VI QWs.

UR - https://www.scopus.com/pages/publications/0032606389

U2 - 10.1063/1.123344

DO - 10.1063/1.123344

M3 - Article

AN - SCOPUS:0032606389

SN - 0003-6951

VL - 74

SP - 3359

EP - 3361

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature

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