Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

R. Charash; P. P. Maaskant; L. Lewis; C. McAleese; M. J. Kappers; C. J. Humphreys; B. Corbett

doi:10.1063/1.3244203

Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

R. Charash
, P. P. Maaskant
, L. Lewis
, C. McAleese
, M. J. Kappers
, C. J. Humphreys
, B. Corbett

Research output: Contribution to journal › Article › peer-review

Abstract

Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well.

Original language	English
Article number	151103
Journal	Applied Physics Letters
Volume	95
Issue number	15
DOIs	https://doi.org/10.1063/1.3244203
Publication status	Published - 2009

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title = "Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes",

abstract = "Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well.",

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AU - Charash, R.

AU - Maaskant, P. P.

AU - Lewis, L.

AU - McAleese, C.

AU - Kappers, M. J.

AU - Humphreys, C. J.

AU - Corbett, B.

PY - 2009

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AB - Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well.

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U2 - 10.1063/1.3244203

DO - 10.1063/1.3244203

M3 - Article

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

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ER -

Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

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