Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs

Paul Hurley

doi:10.1149/ma2009-01/19/799

Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs

Paul Hurley

Research output: Contribution to journal › Meeting abstract › peer-review

Original language	English
Journal	ECS Meeting Abstracts
DOIs	https://doi.org/10.1149/ma2009-01/19/799
Publication status	Published - 2009

Keywords

Materials science
Tin
Optoelectronics
Silicon
MOSFET
Engineering physics
Electron mobility
Metal gate
Electronic engineering
Electrical engineering
Gate oxide
Engineering
Transistor
Metallurgy
Voltage

Access to Document

10.1149/ma2009-01/19/799

https://openalex.org/W2281692611Licence: CC BY-NC-ND

Cite this

@article{6e87150c46a34425911afc51c193aacb,

title = "Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs",

keywords = "Materials science, Tin, Optoelectronics, Silicon, MOSFET, Engineering physics, Electron mobility, Metal gate, Electronic engineering, Electrical engineering, Gate oxide, Engineering, Transistor, Metallurgy, Voltage",

author = "Paul Hurley",

year = "2009",

doi = "10.1149/ma2009-01/19/799",

language = "English",

journal = "ECS Meeting Abstracts",

issn = "1091-8213",

}

TY - JOUR

T1 - Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs

AU - Hurley, Paul

PY - 2009

Y1 - 2009

KW - Materials science

KW - Tin

KW - Optoelectronics

KW - Silicon

KW - MOSFET

KW - Engineering physics

KW - Electron mobility

KW - Metal gate

KW - Electronic engineering

KW - Electrical engineering

KW - Gate oxide

KW - Engineering

KW - Transistor

KW - Metallurgy

KW - Voltage

U2 - 10.1149/ma2009-01/19/799

DO - 10.1149/ma2009-01/19/799

M3 - Meeting abstract

SN - 1091-8213

JO - ECS Meeting Abstracts

JF - ECS Meeting Abstracts

ER -