@inbook{deccf5054aa3422f9cf6e50bd08423f8,
title = "Carrier transport in (In,Ga)N quantum well systems: Connecting atomistic tight-binding electronic structure theory to drift-diffusion simulations",
abstract = "Understanding the impact of the alloy microstructure on carrier transport in (In,Ga)N/GaN quantum well systems is important for aiding device design. We study the impact that alloy fluctuations have on uni-polar carrier transport for both electrons (n-i-n junction) and holes (p-i-p junction) using a multiscale framework. To do so we connect an atomistic tight-binding model to a 3D macroscale drift-diffusion solver, ddfermi, which includes quantum corrections through the localization landscape theory. Results indicate that for electrons, alloy fluctuations lead to a higher current at a fixed bias compared to a calculation without alloy fluctuations. In contrast, alloy induced hole localization effects results in a reduced current.",
keywords = "III-Nitrides, multiscale modelling, quantum wells, transport",
author = "Michael O'Donovan and Patricio Farrell and Timo Streckenbach and Thomas Koprucki and Stefan Schulz",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022 ; Conference date: 12-09-2022 Through 16-09-2022",
year = "2022",
doi = "10.1109/NUSOD54938.2022.9894745",
language = "English",
series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",
publisher = "IEEE Computer Society",
pages = "97--98",
booktitle = "2022 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2022",
address = "United States",
}