CdTe epitaxial layers in ZnSe-based heterostructures

S. Rubini; B. Bonanni; E. Pelucchi; A. Franciosi; Y. Zhuang; G. Bauer

doi:10.1016/S0022-0248(98)01377-3

CdTe epitaxial layers in ZnSe-based heterostructures

S. Rubini
, B. Bonanni
, E. Pelucchi
, A. Franciosi
, Y. Zhuang
, G. Bauer

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 2̄]ZnSe∥[1 1 0]GaAs and [1 1̄ 0]ZnSe∥[1 1̄ 0]GaAs epitaxial relations.

Original language	English
Pages (from-to)	465-469
Number of pages	5
Journal	Journal of Crystal Growth
Volume	201
DOIs	https://doi.org/10.1016/S0022-0248(98)01377-3
Publication status	Published - May 1999
Externally published	Yes
Event	Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: 31 Aug 1998 → 4 Sep 1998

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title = "CdTe epitaxial layers in ZnSe-based heterostructures",

abstract = "We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 {\=2}]ZnSe∥[1 1 0]GaAs and [1 {\=1} 0]ZnSe∥[1 {\=1} 0]GaAs epitaxial relations.",

author = "S. Rubini and B. Bonanni and E. Pelucchi and A. Franciosi and Y. Zhuang and G. Bauer",

year = "1999",

month = may,

doi = "10.1016/S0022-0248(98)01377-3",

language = "English",

volume = "201",

pages = "465--469",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

note = "Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) ; Conference date: 31-08-1998 Through 04-09-1998",

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TY - JOUR

T1 - CdTe epitaxial layers in ZnSe-based heterostructures

AU - Rubini, S.

AU - Bonanni, B.

AU - Pelucchi, E.

AU - Franciosi, A.

AU - Zhuang, Y.

AU - Bauer, G.

PY - 1999/5

Y1 - 1999/5

N2 - We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 2̄]ZnSe∥[1 1 0]GaAs and [1 1̄ 0]ZnSe∥[1 1̄ 0]GaAs epitaxial relations.

AB - We investigated the possibility of integrating CdTe layers in ZnSe-based heterostructures on GaAs(0 0 1) wafers. In particular, we used molecular beam epitaxy to fabricate ZnSe/CdTe/ZnSe structures on GaAs buffer layers. CdTe was found to grow with (1 1 1) orientation on ZnSe(0 0 1) 2×1. Epitaxial overgrowth of ZnSe(1 1 1) on CdTe(1 1 1) was observed for the first time, with [1 1 2̄]ZnSe∥[1 1 0]GaAs and [1 1̄ 0]ZnSe∥[1 1̄ 0]GaAs epitaxial relations.

UR - https://www.scopus.com/pages/publications/0032657079

U2 - 10.1016/S0022-0248(98)01377-3

DO - 10.1016/S0022-0248(98)01377-3

M3 - Article

AN - SCOPUS:0032657079

SN - 0022-0248

VL - 201

SP - 465

EP - 469

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)

Y2 - 31 August 1998 through 4 September 1998

ER -

CdTe epitaxial layers in ZnSe-based heterostructures

Abstract

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